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INFINITY Z-FLEX ION BEAM SOLUTION

INFINITY Z-FLEX ION BEAM SOLUTION

INFINITY Z-FLEX ION BEAM SOLUTION

Product catalog summary
Overview: The Denton Vacuum Infinity Z-Flex Ion Beam Solution integrates ion beam etching and sputtering in a single tool, offering flexibility for diverse applications. It features a computer-controlled system with a single wafer transfer mechanism and optimized geometry for various sputtering and etching modes.
Benefits: The system provides ion beam etch and deposition within one vacuum chamber, supports a wide range of process pressures, and allows control over adatom energies. It ensures low plasma damage etching, excellent uniformity, and repeatability, accommodating substrates up to 12 inches.
Technical Specifications: The Infinity Biased Target Deposition System includes ion beam sputtering for excellent thickness uniformity and dense films, biased substrate for low plasma damage etching, and biased target sputtering for independent ion current control. It is compatible with front-end options and features automation software for enhanced process control.
System Features: The system employs Denton's patented technologies, including biased target sputtering, ion beam sputtering, and biased substrate etching. It uses a 12cm RF ion source and supports up to four sputter targets, with feedback sensors for advanced process controls.
Applications: The system is suitable for semiconductor, MEMS, laser, and data storage applications, including disk slider fabrication, HAMR and TMR applications, FinFET and advanced memory development, and laser facet coatings.
Configuration Options: The system offers ion beam deposition with assist source for preclean and densification, in-situ thickness control, and residual gas analyzer. Etch methods include ion beam, reactive ion beam, and chemically assisted ion beam, with modules like SIMS and electrostatic chuck.
Optical Properties: The document includes a graph showing the optical properties of oxides prepared by ion beam deposition, detailing the index of refraction and extinction coefficient for materials like TiO₂, Nb₂O₅, Ta₂O₅, Al₂O₅, and SiO₂ across different wavelengths.
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Catalog excerpts

INFINITY Z-FLEX ION BEAM SOLUTION-1

INFINITY Z-FLEX ION BEAM SOLUTION TECHNICAL SPECIFICATION SHEET Denton Vacuum Infinity Z-Flex combines the best of ion beam etching and the best of ion beam sputtering in one tool to provide the flexibility for a wide range of applications. BENEFITS INCLUDE: • Ion beam etch and deposition in one vacuum chamber • Wide range of process pressures • Control of adatom energies • Atomically engineered thin film interfaces and surfaces • Low plasma damage etching • Excellent uniformity and repeatability • Able to accommodate multiple substrate sizes up to 12" Infinity Biased Target Deposition System Excellent thickness uniformity Dense, defect free films Biased substrate Low plasma damage etch Biased target sputtering Independent control of ion currents and energies, interface engineering Compatible with front-end options Easily scalable to meet throughput demands Automation software Enhanced process control Short MTTR/Long MTBF High system uptime and ease of maintenance 1259 North Church Street, Bldg 3, Moorestown, NJ USA 08057 | 1-800-666-6004 [email protected] | www.dento

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INFINITY Z-FLEX ION BEAM SOLUTION-2

SYSTEM OVERVIEW Get the best of ion beam etching and ion beam sputtering in one tool with the flexible Infinity Z-Flex Ion Beam system. The system is fully computer controlled and features an integrated single wafer transfer system, boasting a versatile and optimized geometry for numerous sputtering and etching/milling modes. Denton’s patented biased target sputtering (BTS), ion beam sputtering and biased substrate etching technologies are available in this package for enhanced thin film engineering and process control. Ion beam etching (IBE) uses an energetic, broad beam collimated and highly...

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