Infinity RM Ion Beam Deposition System TECHNICAL SPECIFICATION SHEET The Infinity RM Ion Beam Deposition System provides the best quality films for the most demanding and challenging applications. BENEFITS INCLUDE: • Pre-configured end-to-end ion beam deposition system with options for hardware and monitors • Independent control of ion energy and flux – provides control of film microstructure, stoichiometry and stress • Stable deposition rates enable excellent control of film thickness and uniformity • Second ion source for ion-assisted deposition and pre-clean • Easy-to-use software built on GE Cimplicity – access to source code provided • Able to accommodate multiple substrate sizes up to 8” Infinity RM Ion Beam Deposition System Bird’s-eye View Infinity RM Ion Beam Deposition System Schematic Typical Deposition Rates Compound Aluminum Oxide (1102) Deposition Rate (A/min) Sputter Yield (molecules/ions) Indium Antimonide Lithium Niobate (Y-cut) Molybdenum Carbide 1259 North Church Street, Bldg 3, Moorestown, NJ USA 08057 | 1-800-666-6004 [email protected] | www

Infinity RM Ion Beam Deposition System Specifications Criteria for Selecting an Ion Beam System: • Single wafer Process: • Inert or reactive gas • Substrate/film specifications Substrate Size: • 1-inch to 8-inch diameter • Process rates • Substrate rotation Water Cooling Angled Deposition Substrate Stage Tilt Fixture: Single and Multi-Rotation • • • • • Single rotation available in 6 and 8 - inch diameter Water-cooled Deposition uniformities < ± 2% Etch uniformities < ± 5% Tilt capability for enhanced uniformity optimization Single Rotation Fixture Multi-Rotation Fixture Ion Beam Deposition Sources...