INFINITY PLANETARY ION BEAM ETCH SOLUTION TECHNICAL SPECIFICATION SHEET This flexible, versatile PSIBE is a batch system that is designed for low-to-mid throughput applications. It features a small tool footprint and is a perfect solution for the MEMS, semiconductor, and data storage markets as well as optics, lenses, pilot production and foundry support. BENEFITS INCLUDE: • Low plasma damage etch • Etch rate selectivity for multiple materials by reactive ion etch and chemically assisted etch • Precise end point control with SIMS detector. • Able to accommodate multiple substrate sizes up to 8" Bias substrate Low plasma damage etch Reactive ion beam etch Material etch rate selectivity Chemically assisted ion beam etch Material etch rate selectivity Secondary ion mass spectrometer Precise delayering and end point control Three substrate planets Batch production Small footprint Automation software Enhanced process control Short MTTR/Long MTBF High system uptime and ease of maintenance 1259 North Church Street, Bldg 3, Moorestown, NJ USA 08057 | 1-800-666-6004 [email protected] | www.dentonvacuu

SYSTEM OVERVIEW The Infinity PSIBE System features an industry-leading ion beam source, an optional integrated Secondary Ionization Mass Spectrometer (SIMS) for endpoint detection, advanced Semiconductor Layer Stop Technology (SLST) and automatic layer termination software delivering full computer control. The Infinity PSIBE system delivers high-performance etching, critical thin film profile milling, glancing angle milling and more. It enables cost-effective manual sample transfer with a single wafer load lock. The system is class 1000 cleanroom compatible (ballroom style) and ESD compliant,...