INFINITY ION BEAM ETCH SOLUTION TECHNICAL SPECIFICATION SHEET Patented substrate bias option for low damage etching of sensitive structures used in advanced semiconductor processing. BENEFITS INCLUDE: • Low plasma damage etch • High power etch with electrostatic chuck • Etch rate selectivity for multiple materials by reactive ion etch and chemically assisted etch • Precise delayering and end point control with SIMS detector • Able to accommodate multiple substrate sizes up to 6" Bias substrate Low plasma damage etch Reactive ion beam etch Material etch rate selectivity Chemically assisted ion beam etch Material etch rate selectivity Secondary ion mass spectrometer Precise delayering and end point control Compatible with front-end options Easily scalable to meet throughput demands Automation software Enhanced process control Short MTTR/Long MTBF High system uptime and ease of maintenance 1259 North Church Street, Bldg 3, Moorestown, NJ USA 08057 | 1-800-666-6004 [email protected] | www.dentonvac

SYSTEM OVERVIEW Ion beam etching (IBE) uses an energetic, broad beam collimated and highly directional ion source to physically mill material from a substrate mounted on a rotating fixture with adjustable tilt angle. The ion sources used are gridded ion sources of the Kaufman type and are typically neutralized with an independent electron source. Large and small ion sources are available and capable of uniform etching over areas as large as 9 inches in diameter. The highly collimated, directional ion flux allows for anisotropic etching of any material. The ability to modify the angle of the substrate...