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INFINITY FA SYSTEM

INFINITY FA SYSTEM

INFINITY FA SYSTEM

Product catalog summary
Overview: The Denton Vacuum Infinity FA System is a cost-effective etching and profiling solution designed for high throughput in semiconductor manufacturing. It integrates a Secondary Ion Mass Spectrometer (SIMS) for precise defect analysis, ensuring minimal surface damage and uniform layer removal.
Key Features and Benefits:
  • Broad-beam Ion Source: Ensures uniform delayering over large areas.
  • Low Ion Energy: Minimizes surface damage.
  • Variable Ion Incidence Angle: Normalizes etch rates across different materials.
  • SIMS: Provides high precision endpoint control.
  • Automation Software: Enhances process control and repeatability.
System Overview: The Infinity FA System supports various etching techniques such as Ion Beam Etch (IBE), Reactive Ion Beam Etch (RIBE), and Chemically Assisted Ion Beam Etch (CAIBE) to achieve uniform etch rates across multi-material layers. It is ESD compliant and fully computer-controlled, offering high automation and repeatability. The system is designed for failure analysis, critical thin film profiling, and delayering, with a focus on improving process yield.
Applications:
  • Semiconductor failure analysis
  • Delayering
  • Yield improvement
  • Reverse engineering
  • Microdisplay failure analysis
Graph Analysis: The document includes a graph showing the relationship between incidence angle and etch selectivity, highlighting the point of inflection for different materials such as SiO₂ and various metals.
Support and Maintenance: Denton provides robust process and equipment support, including a preventive maintenance schedule and responsive global service team to ensure optimal productivity and system uptime.
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Catalog excerpts

INFINITY FA SYSTEM-1

INFINITY FA SYSTEM Denton Vacuum Infinity FA System is a cost-effective solution for etching and profiling devices with high throughput, providing rapid results at a low cost of ownership. The fully integrated SIMS package provides the precision required to locate small defects for further analysis. BENEFITS INCLUDE: • Large etch area • Delayering capability for all typical semiconductor device materials • Pristine sample surface for high resolution imaging • Uniform layer removal regardless of chemical composition • Precision endpoint control • Able to accommodate multiple substrate sizes up to 6" Uniform delayering over a large area Minimal damage to the surface Variable Ion Incidence Angle Etch rate normalization for different materials Secondary Ion Mass Spectrometer (SIMS) High precision endpoint control Automation Software Enhanced process control 1259 North Church Street, Bldg 3, Moorestown, NJ USA 08057 | 1-800-666-6004 [email protected] | www.dentonv

 Open the catalog to page 1
INFINITY FA SYSTEM-2

SYSTEM OVERVIEW The Infinity FA System is a high-performance etching tool designed for failure analysis sample preparation, critical thin film profiling and delayering in semiconductor manufacturing. Ion beam etch (IBE), reactive ion beam etch (RIBE), and chemically assisted ion beam etch (CAIBE) can be utilized to provide uniform etch rates for multi-material layers. The system includes a robust secondary ion mass spectrometer (SIMS) package for analyzing thin film removal. It is ESD compliant and is fully computer controlled for high automation and repeatability. SIMS enables precision endpoint...

 Open the catalog to page 2
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