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INFINITY BIASED TARGET SPUTTERING SYSTEM

INFINITY BIASED TARGET SPUTTERING SYSTEM

INFINITY BIASED TARGET SPUTTERING SYSTEM

Product catalog summary
Introduction
Denton Vacuum's Infinity Biased Target Sputtering (BTS) System is designed for applications requiring atomically engineered thin films and interfaces. It offers enhanced performance over traditional ion beam sputtering, particularly for high-performance multilayer devices such as giant magnetoresistive multilayers, optical interference filters, and gate dielectric stacks.

Benefits
  • Wide range of process pressures
  • Control of adatom energies
  • Excellent uniformity and repeatability
  • Low defect and contamination levels
  • Capability to accommodate multiple substrate sizes up to 8 inches

Technical Specifications
  • Biased target sputtering allows independent control of ion currents and energies, facilitating interface engineering.
  • Low process pressure results in a large mean free path, contributing to dense films.
  • Electronic shuttering enables instantaneous start/stop for repeatability.
  • Compatible with front-end options, making it scalable to meet throughput demands.
  • Automation software enhances process control.
  • Short Mean Time to Repair (MTTR) and Long Mean Time Between Failures (MTBF) ensure high system uptime and ease of maintenance.

System Overview
The BTS system uses a low energy ion source directed at a negatively biased sputtering target. The ion beam can be broader than the target to improve illumination uniformity. A plasma sheath at the target surface accelerates positive ions to produce sputtering. The system allows a wide range of target voltages (100 to 2000 V) and process pressures (10-4 to 5×10-3 Torr), enabling control over adatom energies and scattering.

Configuration Options
  • Biased Target Module with assist source for pre-clean and densification
  • In-situ thickness control
  • Residual gas analyzer
  • Front ends include single wafer load lock, cassette load lock, and cluster tool front end

Applications
  • Precision optics (HAMR, EUV)
  • VCSEL anti-reflective coatings
  • Next-gen VOx microbolometers
  • High-efficiency solar cells
  • Spin valves for magnetic recording

Additional Features
A second, low energy ion source can modify the properties of the growing film, create smooth films, and etch or clean surfaces prior to deposition. Reactive assist ions can create dielectric films from metallic targets.

Conclusion
The Infinity Biased Target Sputtering System by Denton Vacuum offers advanced capabilities for thin film deposition, providing flexibility, precision, and scalability for various high-tech applications.
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Catalog excerpts

INFINITY BIASED TARGET SPUTTERING SYSTEM-1

INFINITY BIASED TARGET SPUTTERING SYSTEM TECHNICAL SPECIFICATION SHEET Patented biased target sputtering technology provides higher performance than traditional ion beam sputtering. BENEFITS INCLUDE: • Wide range of process pressures • Control of adatom energies • Excellent uniformity and repeatability • Low defect and low contamination • Atomically engineered thin film interfaces and surfaces • Able to accommodate multiple substrate sizes up to 8" Infinity Biased Target Sputtering System Biased target sputtering Independent control of ion currents and energies, interface engineering Large mean free path Collimation Dense films Electronic shuttering Instantaneous start/stop Repeatability Compatible with front-end options Easily scalable to meet throughput demands Automation software Enhanced process control Short MTTR/Long MTBF High system uptime and ease of maintenance 1259 North Church Street, Bldg 3, Moorestown, NJ USA 08057 | 1-800-666-6004 [email protected] | www.dentonv

 Open the catalog to page 1
INFINITY BIASED TARGET SPUTTERING SYSTEM-2

SYSTEM OVERVIEW Denton Vacuum’s Infinity Biased Target Sputtering System is uniquely suited to demanding applications requiring atomically engineered thin films and interfaces. It offers a large range of process pressures, control of adatom energies and excellent uniformity and repeatability. High performance multilayer devices such as giant magnetoresistive multilayers, optical interference filters and gate dielectric stacks are particularly well suited to BTS. In BTS, a low energy ion source (typically of the end-Hall or closed-drift Hall type) is directed at a negatively biased sputtering...

 Open the catalog to page 2
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