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Danfoss Bond Buff er P3
1 /2Pages

Danfoss Bond Buff er P3

Danfoss Bond Buff er P3
1 /2Pages

Catalog excerpts

Danfoss Bond Buff er P3-1

ENGINEERING TOMORROW Danfoss Bond Buffer P3 Features ■ Junction temperature up to 175 deg C ■ P3 IGBT half bridge module 1000A/1700V ■ Sintered semiconductors and copper wires ■ High power cycling capability ■ NTC temperature sensor ■ Ready for ShowerPower® ■ Up to 15 times higher lifetime ■ Increase power output up to 30% ■ Low stray inductance ■ High power density ■ Soft switching diodes ■ Easy paralleling ■ Designed for harsh environments ■ Multiple semiconductor sourcing ■ Industry standard housing ■ Possible to sinter passive components ■ Other topologies, voltage power classes possible Applications (examples) ■ Motor drives ■ Active frontend ■ Solar central inverter ■ Wind turbine ■ UPS ■ Traction

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Danfoss Bond Buff er P3-2

ENGINEERING TOMORROW Danfoss Silicon Power Based in Flensburg, Germany, Danfoss Silicon Power is a leading developer of customer specific IGBT and MOSFET modules and power stacks for power intensive applications. Our power modules and power stacks are a preferred choice in demanding automotive and wind power applications and a wide variety of industrial applications. Our 35,000 m2 research, development and production facility is certified according ISO 9001, ISO/TS 16949, ISO 14001, ISO 50001 and OHSAS 18001. This enables us to quickly transfer development projects to high volume production that...

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.