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SiC Schottky Diodes CPW2-0600-S006B

SiC Schottky Diodes CPW2-0600-S006B
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Catalog excerpts

CPW2-0600S006–Silicon Carbide Schottky Diode Chip Zero Recovery® Rectifier Chip Outline 600-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Part Number Maximum Ratings Symbol Value Unit Test Conditions Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage TC=25˚C, tP=10 ms, Half Sine Wave Average Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Operating Junction and Storage Temperature Subject to change without notice. www.cree.com/power

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Electrical Characteristics Symbol Test Conditions Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance Note: 1. Assumes θJC Thermal Resistance of 1.8˚C/W or less Mechanical Parameters Parameter Wafer Size Anode Metalization (Al) Cathode Metalization (NiV/Ag) Frontside Passivation

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Chip Dimensions Part Number The die-on-tape method of delivering these SiC die may be considered a means of temporary storage only. Due to an increase in adhesion over time, die stored for an extended period may affix too strongly to the tape. These die should be stored in a temperature-controlled nitrogen dry box soon after receipt. Cree will further recommend that all die be removed from tape to a waffle pack, to a similar storage medium, or used in production within 2 – 3 weeks of delivery to assure 100% release of all die without issues. This product has not been designed or tested for...

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