240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Typical Performance Over 2.7-3.1 GHz Parameter Output Power Power Added Efficiency Note: Measured in the CGH31240F-TB amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm. Features • 2.7 - 3.1 GHz Operation • 12 dB Power Gain • 60 % Power Added Efficiency • < 0.2 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Pulse Width Duty Cycle Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Screw Torque Pulsed Thermal Resistance, Junction to Case3 Case Operating Temperature3 Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 Measured for the CGH31240F at PDISS = 280 W. Pulse Width = 300 μS, Duty Cycle = 20%. Electrical Characteristics (TC = 25˚C)...

Typical Performance Gain and Return Losses vs Frequency of the CGH31240F Measured in CGH31240-TB Amplifier Circuit. VDS = 28 Sparameters CGH31240 V, IDS = 1 A Typical Pulsed Output Power and Power Gain vs Frequency of the CGH31240F Measured in CGH31240-TB Amplifier Circuit. CGH31240 RF Performance vs Frequency VDS = 28 V, IDS = 1 PinPIN =dBmdBm, Pulse Width20 % duty cycle A, = 42 42 - Pulse = 300 us @ = 300 μS, Duty Cycle = 20% Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks...

Typical Performance CGH31240 Output Powervs Input Power CGH31240 Output Power vs Input Power VDS = 28 V, IDS =V, Idq Pulse PW = 300 us, Duty Cycle = 20 % = 20 % Vdd = 28 1 A, = 1 A, Width = 300 μS, Duty Cycle 60 55 2.7 GHz CGH31240 PAE & Gain vs Input Power CGH31240 PAE & Gain vs Input Power and Fixture VDS = 28Vdd DS 28 1 A, Pulse Width = 300 μS, Duty Cycle =% % V, I = = V, Idq = 1A, PW = 300 us, Duty Cycle = 20 20 Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree,...

Typical Performance Typical Pulsed Output Power and Power Added Efficiency vs Frequency of the CGH31240F Measured in CGH31240-TB Amplifier Circuit. CGH31240 RF Performance vs Frequency VDS = 28 V, IDS = 1 A, Pin = = 42 dBm, Pulse Width = 300 μS, Duty Cycle = 20% PIN 42 dBm - Pulse = 300 us @ 20 % duty cycle Typical Pulse Droop Performance CGH31240F Pulsed Power Performance 54.3 300 us 5 % Pulse Width Duty Cycle (%) Electrostatic Discharge (ESD) Classifications Parameter Test Methodology Human Body Model Charge Device Model Copyright © 2010-2014 Cree, Inc. All rights reserved. The information...

10 % Duty Cycle - Pdiss = 230 W 20 % Duty Cycle - Pdiss = 230 W 50 % Duty Cycle - Pdiss = 230 W 10 % Duty Cycle - Pdiss = 345 W Pulse Width (seconds) CGH31240 Transient Power Dissipation De-ratingCurve CGH3x240F Pulsed Power Dissipation De-rating Curve 400 Maximum Case Temperature (°C) Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA...

CGH31240F-TB Demonstration Amplifier Circuit Bill of Materials CGH31240F-TB Demonstration Amplifier Circuit Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Durham, North Carolina, USA 27703 \ the Cree logo are registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 ~

CGH31240F-TB Demonstration Amplifier Circuit Schematic Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Durham, North Carolina, USA 27703 \ the Cree logo are registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 ~

Typical Package S-Parameters for CGH31240F (Small Signal, V = 28 V, I = 1000 mA, angle in degrees) Download this s-parameter file in ".s2p" format at http://www.cree.com/products/wireless s-parameters.asp Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Durham, North Carolina, USA 27703 \ the Cree logo are registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 ~

Product Dimensions CGH31240F (Package Type — 440201) 1. DIMENSIONING AND TDLERANCING PER ANSI Y14.5M 2, CONTROLLING DIMENSION: INCH, 3, ADHESIVE FROM LID MAY EXTEND A MAXIMUM OF 4, LID MAY BE MISALIGNED TO THE BODY OF PACKAGE Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and Durham, North Carolina, USA 27703 \ the Cree logo are registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 ~

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities...