Silicon Carbide Schottky Diode Z-Rec® Rectifier Features 650-Volt Schottky Rectifier Reduced VF for Improved Efficiency High Humidity Resistance Zero Forward and Reverse Recovery Voltage Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Part Number Power Inverters Motor Drives EV Chargers Power Factor Correction Server Power Supplies Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Test Conditions Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Peak Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Non-Repetitive Forward Surge Current TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse Non-Repetitive Peak Forward Current Power Dissipation Operating Junction and Storage Temperature Nm M3 Screw lbf-in 6-32 Screw

Electrical Characteristics Symbol VF Forward Voltage Total Capacitive Charge Total Capacitance Reverse Current Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Thermal Resistance from Junction to Case Typical Performance Reverse Leakage Current, IRR (mA) IR (mA) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

200 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC Figure 3. Current Derating Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV Figure 4. Power Derating ReverseVR (V) VR (V) Voltage, Figure 5. Recovery Charge vs. Reverse Voltage Reverse Voltage, VR (V) VR (V) Figure 6. Capacitance vs. Reverse Voltage

VR (V) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) Thermal Thermal Resistance (oC/W) Resistance (˚C/W) Figure 9. Transient Thermal Impedance

Package Dimensions Inches NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout Part Number Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering

Diode Model Diode Model CSD04060 VfVfT = T + +If*RT T = V VT If*RT VTT= 0.965 + (Tj * -1.3*10-3) V = 1.0081+(TJ* -1.6*10-3) -3 RT = 0.0146+(TJ* 1.7*10-4) T= 0.096 + (Tj * 1.06*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations...