CGH80030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT), based on Cree’s 28V, 0.25um GaN-on-SiC process technology. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors. • 17 dB Typical Small Signal Gain at 4 GHz • 12 dB Typical Small Signal Gain at 8 GHz Broadband Amplifiers Cellular Infrastructure Test Instrumentation • High Breakdown Voltage Class A, AB, Linear amplifiers suitable for • High Temperature Operation OFDM, W-CDMA, EDGE, CDMA waveforms • Up to 8 GHz Operation • High Efficiency Packaging Information Bare die are shipped in Gel-Pak® containers. Non-adhesive tacky membrane immobilizes die during shipment.

Absolute Maximum Ratings (not simultaneous) at 25˚C Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current Thermal Resistance, Junction to Case (packaged)2 Thermal Resistance, Junction to Case (die only) Mounting Temperature (30 seconds) Note1 Current limit for long term, reliable operation Note2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier. Electrical Characteristics (Frequency = 4 GHz unless otherwise stated; TC = 25˚C) Characteristics Gate Threshold Voltage Gate...

DIE Dimensions (units in microns) Overall die size 1660 x 920 (+0/-50) microns, die thickness 100 (+/-10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Assembly Notes: • Recommended solder is AuSn (80/20) solder. Refer to Cree's website for the Eutectic Die Bond Procedure application note at • Vacuum collet is the preferred method of pick-up. • The backside of the die is the Source (ground) contact. • Die back side gold plating is 5 microns thick minimum. • Thermosonic ball or wedge bonding are the preferred connection methods. • Gold wire must be used for connections....

Typical Performance Simulated Maximum Available Gain and K Factor of the CGH80030D Intrinsic die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed. Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH80030D Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product...

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large...