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TRIACs CQ89D*

Product catalog summary

Description: The CENTRAL SEMICONDUCTOR CQ89D series are epoxy molded silicon triacs designed for full wave AC control applications, featuring gate triggering in all four quadrants.

Marking Code: Full part number is used for marking.

Maximum Ratings (at TC=25°C):

Peak Repetitive Off-State Voltage (V_DRM): 400V (CQ89D), 600V (CQ89M), 800V (CQ89N)
RMS On-State Current (I_T(RMS)): 1.0 A
Peak One Cycle Surge (I_TSM): 10 A
Peak Gate Current (I_GM): 1.0 A
Average Gate Power Dissipation (P_G(AV)): 0.1 W
Storage Temperature (T_stg): -40 to +150°C
Junction Temperature (T_J): -40 to +125°C
Thermal Resistance (Θ_JC): 10°C/W

Electrical Characteristics (at TC=25°C unless otherwise noted):

Off-State Current (I_DRM): 10 µA at rated V_DRM, 200 µA at TC=125°C
Gate Trigger Current (I_GT): 10 mA at VD=12V, Quadrants I-IV
Holding Current (I_H): 10 mA at VD=12V
Gate Trigger Voltage (V_GT): 2.0 V for Quadrants I-III, 2.5 V for Quadrant IV
On-State Voltage (V_TM): 2.0 V at I_T=1.0A
Critical Rate of Rise of Off-State Voltage (dv/dt): 5.0 V/µs at VD=2/3 V_DRM, TC=125°C

Mechanical Outline (SOT-89 Case): Dimensions are provided in both inches and millimeters, with specific measurements for various parts of the component.

Lead Code: 1) Gate, 2) MT2, 3) MT1

Catalog excerpts

Semiconductor Corn. series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER Peak Repetitive Off-State Voltage Peak One Cycle Surge (tp=10 ms) Peak Gate Current Average Gate Power Dissipation Storage Temperature Junction Temperature Thermal Reistance ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 'DRIVI VD=Rated Vdrm 10 uA IDRM VD=Rated VDRM, TC=125°C 200 uA

Open the catalog to page 1

Semiconductor Corn. SOT-89 CASE - MECHANICAL OUTLINE Bottom View LEAD CODE: MARKING CODE: FULL PART NUMBER

Open the catalog to page 2

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