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Transistors CTLT3410-M621 (NPN)

Transistors CTLT3410-M621 (NPN)

Product catalog summary

Overview: The document provides technical specifications and details for Central Semiconductor's CTLT3410-M621 (NPN) and CTLT7410-M621 (PNP) transistors. These are low VCE(SAT) transistors housed in a compact TLM621 package, designed for applications requiring small size, high efficiency, and significant current capacity.

Specifications: Both NPN and PNP transistors have a maximum collector current (IC) of 1.0A, a minimum collector-base breakdown voltage (BVCBO) of 40V, and a minimum collector-emitter breakdown voltage (BVCEO) of 25V. The saturation voltage (VCE(SAT)) is 40mV for NPN and 50mV for PNP at 100mA. The devices can operate within a temperature range of -65°C to +150°C and have a power dissipation (PD) of 0.9W.

Features: Key features include high operational efficiency, a high power-to-footprint ratio, and low profile packaging. The transistors are designed for energy efficiency and are complementary NPN and PNP devices.

Applications: These transistors are suitable for DC-DC conversion, load switching, LCD backlighting, and power management applications.

Packaging and Ordering: The transistors are available in 7” reels with a maximum of 3,000 parts per reel. They are taped according to the Electronic Industries Association Standard EIA-481-1-A. Sample devices can be ordered through Central Semiconductor's website.

Mechanical and Thermal Characteristics: The TLM621 package is thermally efficient, allowing the transistors to dissipate up to three times the power of standard devices in similar-sized packages. The thermal resistance (ΘJA) is 139°C/W.

Contact Information: For further information or to order samples, contact Central Semiconductor Corp. at their Hauppauge, New York location or visit their website.

Catalog excerpts

Product Brief CTLT3410-M621 (NPN) CTLT7410-M621 (PNP) 25V, 1.0A Low VCE(SAT) Transistors in miniature TLM621 package Typical Electrical Characteristics Central Semiconductor’s CTLT3410-M621 (NPN) and CTLT7410-M621 (PNP) are Low VCE(SAT) transistors in a diminutive leadless 1x2mm surface mount package designed for applications where small size, operational efficiency, and high current capability are prime requirements. The thermally efficient package design makes these devices capable of dissipating up to 3 times the power of standard devices in similarly sized packages. High operational efficiency High power to footprint ratio (Power Density) VCE(SAT) @ 100mA = 40mV (NPN) and 50mV (PNP) High collector current DC-DC conversion Load switching LCD backlighting Power management Benefits: • Energy efficiency • Complementary NPN and PNP devices • Low profile package Literature: New SMD SELECTION GUIDE To order samples of these devices visit: www.centralsemi.com/info/CTLT3410-M621 www.centralsemi.com/info/CTLT7410-M621 weblink scan Use QR reader for direct link to product web page. Order your selection guide today. Visit: web.centralsemi.com/search/sample.php Electrical Characteristics: (TA = 25˚C unless otherwise noted) IC Thermal Characteristics

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Sample devices available upon request. To order samples of these devices visit: www.centralsemi.com/info/CTLT3410-M621 Semiconductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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Transistors CTLT3410-M621 (NPN)

Transistors CTLT3410-M621 (NPN)

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