MAXIMUM RATINGS: (TA=25oC) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 70 V Continuous Forward Current IF 15 mA Forward Surge Current, tp=1.0 s IFSM 50 mA Power Dissipation PD 275 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 oC Thermal Resistance ÈJA 455 oC/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25oC) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=10ìA 70 V VF IF=1.0mA 395 410 mV IR VR=50V 98 200 nA CT VR=0V, f=1.0MHz 2.0 pF trr IR=IF=10mA, Irr=1mA, RL=100Ù 5.0 ns CMSD6263 CMSD6263A CMSD6263C CMSD6263S SURFACE MOUNT SUPERmini™ SILICON SCHOTTKY DIODES SOT-323 CASE Central Semiconductor Corp. TM R2 (4-January 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD6263 Series types are High Voltage Silicon Schottky diodes, epoxy molded in a SUPERmini™ surface mount package, designed for low current fast switching applications requiring a low forward voltage drop. The following configurations are available: MARKING CODE: CMSD6263 SINGLE 76D CMSD6263A DUAL, COMMON ANODE 98D CMSD6263C DUAL, COMMON CATHODE 97D CMSD6263S DUAL, IN SERIES 96D