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SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
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SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET - 1

PRELIMINARY CEDM7001E SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-883L CASE Central Semiconductor Corp. TM R1 (16-March 2007) DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: CEDM7001E: E Top View Bottom View FEATURES: • Power Dissipation 100mW • Low Package Profile, 0.4mm • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, TLP™ 1x0.6mm, SOT-883L Leadless Surface Mount Package APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 V Continuous Drain Current (Steady State) ID 100 mA Continuous Drain Current ID 200 mA Power Dissipation PD 100 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IGSSF VGS=10V, VDS=0V 1.0 ìA IGSSR VGS=10V, VDS=0V 1.0 ìA IDSS VDS=20V, VGS=0V 1.0 ìA BVDSS VGS=0V, ID=100ìA 20 V VGS(th) VDS=VGS, ID=250ìA 0.6 0.9 V rDS(ON) VGS=4.0V, ID=100mA 1.0 2.0 Ù Yfs VDS =10V, ID=100mA 100 mS Crss VDS=3.0V, VGS=0, f=1.0MHz TBD pF Ciss VDS=3.0V, VGS=0, f=1.0MHz TBD pF Coss VDS=3.0V, VGS=0, f=1.0MHz TBD pF ton VDD=3.0V, VGS=2.5V, ID=10mA TBD ns toff VDD=3.0V, VGS=2.5V, ID=10mA TBD ns

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SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET - 2

PRELIMINARY Central Semiconductor Corp. TM R1 (16-March 2007) SOT-883L - MECHANICAL OUTLINE LEAD CODE: 1) GATE 2) SOURCE 3) DRAIN CEDM7001E SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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