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PNP SILICON TRANSISTOR

PNP SILICON TRANSISTOR
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 3.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ÈJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT5086 CMPT5087 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=10V 10 10 nA ICBO VCB=35V 50 50 nA BVCBO IC=100µA 50 50 V BVCEO IC=1.0mA 50 50 V BVEBO IE=100µA 3.0 3.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.30 0.30 V VBE(SAT) IC=10mA, IB=1.0mA 0.85 0.85 V hFE VCE=5.0V, IC=0.1mA 150 500 250 800 hFE VCE=5.0V, IC=1.0mA 150 250 hFE VCE=5.0V, IC=10mA 150 250 fT VCE=5.0V, IC=500ìA, f=20MHz 40 40 MHz Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 4.0 pF hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 150 600 250 900 NF VCE=5.0V, IC=20mA, RS=10kÙ 3.0 2.0 dB f=10Hz to 15.7kHz NF VCE=5.0V, IC=100ìA, RS=3.0kÙ, f=1.0kHz 3.0 2.0 dB CMPT5086 CMPT5087 PNP SILICON TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R4 (26-September 2002) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMPT5086: C2P CMPT5087: C2Q

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Central Semiconductor Corp. TM CMPT5086 CMPT5087 PNP SILICON TRANSISTOR R4 (26-September 2002) LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: CMPT5086: C2P CMPT5087: C2Q SOT-23 CASE - MECHANICAL OUTLINE

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