SURFACE MOUNT DUAL P-CHANNEL SILICON MOSFETS Semiconductor corp. • Device is Halogen Free by design • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, tp<5.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance an Enhancement-mode Dual P-Channel Field Effect Transistor designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. • Logic Level Compatibility • Small SOT-963 Surface Mount Package ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) 'GSSF' 'GSSR TEST CONDITIONS
Open the catalog to page 1SURFACE MOUNT DUAL P-CHANNEL SILICON MOSFETS Semiconductor corp. SOT-963 CASE - MECHANICAL OUTLINE LEAD CODE:
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