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NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 2.5 V Continuous Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ÈJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=15V 20 nA BVCBO IC=10ìA 20 V BVCEO IC=3.0mA 15 V BVEBO IE=10ìA 2.5 V VCE(SAT) IC=10mA, IB=1.0mA 0.4 V VBE(SAT) IC=10mA, IB=1.0mA 1.0 V hFE VCE=1.0V, IC=3.0mA 25 fT VCE=6.0V, IC=5.0mA, f=100MHz 900 1450 MHz Ccb VCB=10V, IE=0, f=1.0MHz 1.0 pF hfe VCE=6.0V, IC=2.0mA, f=1.0kHz 25 Gpe VCE=6.0V, IC=5.0mA, f=200MHz 15 dB NF VCE=6.0V, IC=1.5mA, RS=50Ù, f=200MHz 4.5 dB CMPT5179 NPN SILICON RF TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R5 (4-February 2008) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE: C7H

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Central Semiconductor Corp. TM SOT-23 CASE - MECHANICAL OUTLINE CMPT5179 NPN SILICON RF TRANSISTOR R5 (4-February 2008) LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: C7H

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