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NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR

Product catalog summary

Overview: The document provides technical specifications for the CMPT5179, an NPN silicon RF transistor manufactured by Central Semiconductor Corp. It is designed for low noise, high frequency amplifier and high output oscillator applications, and is encapsulated in a SOT-23 surface mount package.

Maximum Ratings:

Collector-Base Voltage (VCBO): 20 V
Collector-Emitter Voltage (VCEO): 15 V
Emitter-Base Voltage (VEBO): 2.5 V
Continuous Collector Current (IC): 50 mA
Power Dissipation (PD): 350 mW
Operating and Storage Junction Temperature (TJ, Tstg): -65 to +150 °C
Thermal Resistance (ΘJA): 357 °C/W

Electrical Characteristics (at TA=25°C):

Collector-Base Leakage Current (ICBO) at VCB=15V: 20 nA
Collector-Base Breakdown Voltage (BVCBO) at IC=10μA: 20 V
Collector-Emitter Breakdown Voltage (BVCEO) at IC=3.0mA: 15 V
Emitter-Base Breakdown Voltage (BVEBO) at IE=10μA: 2.5 V
Saturation Voltage (VCE(SAT)) at IC=10mA, IB=1.0mA: 0.4 V
Base-Emitter Saturation Voltage (VBE(SAT)) at IC=10mA, IB=1.0mA: 1.0 V
DC Current Gain (hFE) at VCE=1.0V, IC=3.0mA: 25
Transition Frequency (fT) at VCE=6.0V, IC=5.0mA, f=100MHz: 900 to 1450 MHz
Collector-Base Capacitance (Ccb) at VCB=10V, IE=0, f=1.0MHz: 1.0 pF
Small Signal Current Gain (hfe) at VCE=6.0V, IC=2.0mA, f=1.0kHz: 25
Power Gain (Gpe) at VCE=6.0V, IC=5.0mA, f=200MHz: 15 dB
Noise Figure (NF) at VCE=6.0V, IC=1.5mA, RS=50Ω, f=200MHz: 4.5 dB

Mechanical Outline: The transistor is housed in a SOT-23 case with the following lead configuration: 1) Base, 2) Emitter, 3) Collector. The marking code for this component is C7H.

Catalog excerpts

MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 2.5 V Continuous Collector Current IC 50 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ÈJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=15V 20 nA BVCBO IC=10ìA 20 V BVCEO IC=3.0mA 15 V BVEBO IE=10ìA 2.5 V VCE(SAT) IC=10mA, IB=1.0mA 0.4 V VBE(SAT) IC=10mA, IB=1.0mA 1.0 V hFE VCE=1.0V, IC=3.0mA 25 fT VCE=6.0V, IC=5.0mA, f=100MHz 900 1450 MHz Ccb VCB=10V, IE=0, f=1.0MHz 1.0 pF hfe VCE=6.0V, IC=2.0mA, f=1.0kHz 25 Gpe VCE=6.0V, IC=5.0mA, f=200MHz 15 dB NF VCE=6.0V, IC=1.5mA, RS=50Ù, f=200MHz 4.5 dB CMPT5179 NPN SILICON RF TRANSISTOR SOT-23 CASE Central Semiconductor Corp. TM R5 (4-February 2008) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5179 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise, high frequency amplifier and high output oscillator applications. MARKING CODE: C7H

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Central Semiconductor Corp. TM SOT-23 CASE - MECHANICAL OUTLINE CMPT5179 NPN SILICON RF TRANSISTOR R5 (4-February 2008) LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: C7H

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NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR

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