MULTI DISCRCTC MODLLC " SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Multi Discrete Modula MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Semiconductor corp. Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low Vp Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: N-Channel MOSFET and MAXIMUM RATINGS - D1 : (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRIVI Continuous Forward Current lp Peak Repetitive Forward Current, tp<1.0ms 'FRM Peak Forward Surge Current, tp=8.0ms 'FSM ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX

MULTI DISCRCTC MODLLC " SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE: