Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205

Product catalog summary

Description: The CENTRAL SEMICONDUCTOR CMLM0205 is a Multi Discrete Module™ that includes an N-Channel MOSFET and a Low VF Schottky diode in a compact PICOmini™ SOT-563 package. It is designed for small signal general-purpose applications prioritizing size and efficiency.

Key Features:

Combination of N-Channel MOSFET and Low VF Schottky Diode.
Marking Code: C25

Maximum Ratings:

Case (TA=25°C):
- Power Dissipation: 350 mW
- Operating and Storage Temperature: -65 to +150 °C
- Thermal Resistance: 357 °C/W
MOSFET (Q1) (TA=25°C):
- Drain-Source Voltage: 60 V
- Drain-Gate Voltage: 60 V
- Gate-Source Voltage: 40 V
- Continuous Drain Current: 280 mA
- Maximum Pulsed Drain Current: 1.5 A
Schottky Diode (D1) (TA=25°C):
- Peak Repetitive Reverse Voltage: 40 V
- Continuous Forward Current: 500 mA
- Peak Forward Surge Current: 10 A

Electrical Characteristics:

MOSFET (Q1):
- Gate Leakage Current: 100 nA
- Drain-Source Leakage Current: 1.0 μA
- On-State Drain Current: 500 mA
- Threshold Voltage: 1.0 to 2.5 V
- On-Resistance: 2.0 Ω at 10V, 500mA
Schottky Diode (D1):
- Reverse Current at 10V: 20 μA
- Forward Voltage at 500mA: 0.47 V

Mechanical Outline: The device is housed in a SOT-563 case with specific lead codes for gate, source, cathode, anode, and drain connections.

Catalog excerpts

Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205-1

MULTI DISCRCTC MODLLC " SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Multi Discrete Modula MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Semiconductor corp. Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low Vp Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: N-Channel MOSFET and MAXIMUM RATINGS - D1 : (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRIVI Continuous Forward Current lp Peak Repetitive Forward Current, tp<1.0ms 'FRM Peak Forward Surge Current, tp=8.0ms 'FSM ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX

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Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205-2

MULTI DISCRCTC MODLLC " SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE:

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