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Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205

Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205
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Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205 - 1

MULTI DISCRCTC MODLLC " SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Multi Discrete Modula MAXIMUM RATINGS - CASE: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Semiconductor corp. Multi Discrete Module™ consisting of a single N-Channel MOSFET and a Low Vp Schottky diode packaged in a space saving PICOmini™ SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Combination: N-Channel MOSFET and MAXIMUM RATINGS - D1 : (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRIVI Continuous Forward Current lp Peak Repetitive Forward Current, tp<1.0ms 'FRM Peak Forward Surge Current, tp=8.0ms 'FSM ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX

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Multi Discrete Module N-Channel MOSFET and Low VF Schottky Diode CMLM0205 - 2

MULTI DISCRCTC MODLLC " SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN SOT-563 CASE - MECHANICAL OUTLINE LEAD CODE:

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