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MOSFETs CZDM1003N

Product catalog summary

Product Overview: The CZDM1003N is a 3.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET designed by Central Semiconductor. It is packaged in the SOT-223 format and is suitable for applications such as motor control, DC-DC conversion, and relay drivers. The device is noted for its high current capability, low rDS(ON), and low gate charge, contributing to energy efficiency and exceptional electrical performance.

Maximum Ratings: The MOSFET operates at a maximum junction temperature (TJ) and storage temperature (Tstg) range of -55 to +150°C. It has a maximum power dissipation (PD) of 2.0W and a thermal resistance (ΘJA) of 62.5°C/W. The breakdown voltage (BVDSS) is 100V, and the gate-source threshold voltage (VGS(th)) ranges from 2.0V to 4.0V.

Electrical Characteristics: The device features a typical gate charge (Qgs) of 10nC, a typical input capacitance (Ciss) of 705pF, and a typical reverse transfer capacitance (Crss) of 55pF. The on-resistance (rDS(ON)) is specified at 70mΩ typical and 150mΩ maximum at a gate-source voltage (VGS) of 10V and a drain current (ID) of 3.0A.

Features and Benefits: Key features include low rDS(ON), high current handling, low gate charge, and energy efficiency. These attributes make the MOSFET suitable for high-performance applications requiring reliable and efficient operation.

Packaging and Ordering Information: The CZDM1003N is available in tape and reel packaging, with a reel size of 7 inches containing 1,000 parts. The devices are taped according to the Electronic Industries Association Standard EIA-481-1-A. The full part number is marked on the device for identification.

Contact and Additional Information: For further details or to request samples, contact Central Semiconductor Corp. at (631) 435-1110 or visit their website at www.centralsemi.com. A QR code is provided for direct access to the product webpage.

Catalog excerpts

PRODUCT BRIEF conductor Corp. Central Semiconductor's CZDM1003N is a 3.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This MOSFET provides high current capability, energy efficient low rDS(ON) anc' exceptionally low gate charge. • High current • Motor control • Relay driver • DC-DC converters Typical Electrical Characteristics Output Characteristics 145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com

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Stay up to date on Central's Sample devices available upon request. To order samples of this device visit: www.centralsemi.com/info/CZDM1003N Semiconductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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