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  3. MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)

MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)
1 /2Pages

MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)

MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)
1 /2Pages

Catalog excerpts

MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)-1

PRODUCT BRIEF Dual, MOSFETs in the TLM832DS package Semiconductor Corp. Central Semiconductor's CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These energy efficient MOSFETs offer beneficially low rDS(ON)> 'ow 9a*e cnar9e> and low threshold voltage. • High current • DC-DC converters • Drive circuits • Power management Typical Electrical Characteristics • High current density • Energy efficiency Typical Output Characteristics 145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com

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MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)-2

CTLDM303N-M832DS (30V, 3.6A N-Channei) Dual, MOSFETs Sample devices available upon request. To order samples visit: www.centralsemi.com/info/CTLDM30 conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

 Open the catalog to page 2

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