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MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)

MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)

Product catalog summary

Overview: Central Semiconductor's CTLDM303N-M832DS and CTLDM304P-M832DS are dual N-Channel and P-Channel enhancement-mode silicon MOSFETs, respectively. These components are designed for high-speed pulsed amplifier and driver applications, offering energy efficiency with low rDS(ON), low gate charge, and low threshold voltage.

Specifications:

CTLDM303N-M832DS (N-Channel): 30V, 3.6A, with a maximum power dissipation of 1.65W and operating temperature range from -55 to +150°C.
CTLDM304P-M832DS (P-Channel): 30V, 4.2A, with similar power dissipation and temperature range as the N-Channel.

Electrical Characteristics:

Both MOSFETs have a maximum junction-to-ambient thermal resistance (ΘJA) of 76°C/W.
Typical gate-source threshold voltage (VGS(th)) ranges from 0.6V to 1.3V for N-Channel and 0.7V to 1.3V for P-Channel.
Typical rDS(ON) values are 33mΩ for N-Channel and 60mΩ for P-Channel at specified VGS and ID conditions.

Applications: These MOSFETs are suitable for DC-DC converters, drive circuits, and power management applications due to their high current density and energy efficiency.

Packaging and Ordering Information:

Available in TLM832DS package with a tape width of 8mm.
Reel sizes are 7” with a maximum of 3,000 parts per reel.
Marking codes are C330 for CTLDM303N-M832DS and C430 for CTLDM304P-M832DS.

Additional Information: For further details, samples, and ordering, visit Central Semiconductor's website or contact their sales department.

Catalog excerpts

MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)-1

PRODUCT BRIEF Dual, MOSFETs in the TLM832DS package Semiconductor Corp. Central Semiconductor's CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These energy efficient MOSFETs offer beneficially low rDS(ON)> 'ow 9a*e cnar9e> and low threshold voltage. • High current • DC-DC converters • Drive circuits • Power management Typical Electrical Characteristics • High current density • Energy efficiency Typical Output Characteristics 145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com

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MOSFETs CTLDM303N-M832DS (30V, 3.6A N-Channel)-2

CTLDM303N-M832DS (30V, 3.6A N-Channei) Dual, MOSFETs Sample devices available upon request. To order samples visit: www.centralsemi.com/info/CTLDM30 conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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