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CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package

CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package

CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package

Product catalog summary
Product Overview: The CXDM4060P is a 6.0A, 40V P-Channel MOSFET housed in a SOT-89 package, designed by Central Semiconductor. It is optimized for high-speed pulsed amplifier and driver applications, offering a medium power solution with excellent energy efficiency and high-speed switching capabilities.
Maximum Ratings: The device operates at a maximum junction temperature (TJ) and storage temperature (Tstg) range of -55 to +150°C. It has a maximum power dissipation (PD) of 1.2W and a thermal resistance (ΘJA) of 104°C/W.
Electrical Characteristics: The MOSFET features a minimum breakdown voltage (BVDSS) of 40V, a gate-source threshold voltage (VGS(th)) ranging from 1.0V to 3.0V, and a typical gate charge (Qgs) of 6.0nC. The typical input capacitance (Ciss) is 750pF, and the reverse transfer capacitance (Crss) is 61pF.
Features and Benefits: Key features include low on-resistance (rDS(ON)), high current capability, low gate charge, and low threshold voltage. The benefits of using this MOSFET include energy efficiency, high power density, and compatibility with industry-standard packages.
Applications: The CXDM4060P is suitable for use in load/power switches, power supply converter circuits, and battery-powered portable equipment.
Mechanical and Packaging Information: The device is available in a SOT-89 package with a specific pinout: 1) Gate, 2) Drain, 3) Source. It is marked with the full part number and follows the Electronic Industries Association Standard EIA-481-1-A for tape dimensions and orientation. The reel size is 7 inches, with a maximum of 6 reels per box and up to 82,000 parts per box.
Ordering and Contact Information: Samples can be requested via the Central Semiconductor website. For further inquiries, contact Central Semiconductor Corp. at (631) 435-1110.
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Catalog excerpts

CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package-1

Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET is an ideal medium power solution with outstanding high speed switching and energy efficiency characteristics. Features: • Low rDS(ON) • High current • Low gate charge • Low threshold voltage Applications: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment Benefits: • Energy efficiency • High power density • Industry standard package Literature New SMD SELECTION GUIDE To request samples visit: www.centralsemi.com/info/CXDM4060P Weblink: Use QR reader for direct link to product web page, or use: www.centralsemi.com/info/CXDM4060P Order your selection guide today. Visit: my.centralsemi.com/search/sample.php Maximum Ratings (TA = 25˚C unless otherwise noted) Electrical Characteristics: (TA = 25˚C unless otherwise noted)

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CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package-2

(Bottom View) Packaging Base / Ordering Information Pinout, Lead Code, and Marking Tape Dimensions and Orientation (Dimensions in mm) accordance with Electronic Industries Association Standard LEAD CODE: Full Part Number Sample devices available upon request. To order samples of this device visit: www.centralsemi.com/info/CXDM4060P " conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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