CXDM3069N
2Pages

Catalog excerpts

Typical Electrical Characteristics Central Semiconductor’s CXDM3069N, CXDM4060N, and CXDM6053N devices are high current N-channel enhancementmode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. Features: • Low rDS(ON) • High current • Low gate charge • Low threshold voltage Applications: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment Samples: Benefits: • Energy efficiency • High power density • Industry standard package Literature: New SMD SELECTION GUIDE To request samples visit: www.centralsemi.com/info/CXDM Weblink: Use QR reader for direct link to product web page, or use: www.centralsemi.com/info/CXDM Order your selection guide today. Visit: web.centralsemi.com/search/sample.php Maximum Ratings (TA = 25˚C unless otherwise noted) Electrical Characteristics: (TA = 25˚C unless otherwise noted)

Open the catalog to page 1

(Bottom View) Packaging Base / Ordering Information Pinout, Lead Code, and Marking Tape Dimensions and Orientation (Dimensions in mm) accordance with Electronic Industries Association Standard LEAD CODE: Full Part Number Sample devices available upon request. To order samples visit: www.centralsemi.com/info/CXDM " conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

Open the catalog to page 2