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CWDM3011N (Single, N-Channel)

CWDM3011N (Single, N-Channel)

Product catalog summary

Overview: Central Semiconductor's CWDM3011N and CWDM3011P are high current enhancement-mode silicon MOSFETs designed for high-speed pulsed amplifier and driver applications. These MOSFETs are available in the SOIC-8 package and are characterized by high current capacity, low rDS(ON), low threshold voltage, and low gate charge.

Benefits: The MOSFETs offer energy efficiency, high power density, and are housed in an industry-standard package.

Features:

Low rDS(ON)
High current capability
Low threshold voltage
Low gate charge

Applications: These components are suitable for load/power switches, power supply converter circuits, and battery-powered portable equipment.

Maximum Ratings: At a temperature of 25˚C, both the CWDM3011N (N-Channel) and CWDM3011P (P-Channel) have a maximum current (ID) of 11A, power dissipation (PD) of 2.5W, and a temperature range (TJ, Tstg) of -55 to +150˚C. The thermal resistance (ΘJA) is 50˚C/W, and the breakdown voltage (BVDSS) is 30V.

Electrical Characteristics: The threshold voltage (VGS(th)) ranges from 1.0V to 3.0V. The typical and maximum rDS(ON) values for the N-Channel are 14mΩ and 18mΩ, respectively, while for the P-Channel, they are 12mΩ and 15mΩ. The gate charge (Qgs) and input capacitance (Ciss) for the N-Channel are 9.0nC and 860pF, respectively, and for the P-Channel, they are 8.5nC and 3100pF.

Mechanical and Packaging Information: The MOSFETs are available in a 13” reel size with a maximum of 3,000 parts per reel. The devices are taped according to the Electronic Industries Association Standard EIA-481-D.

Contact Information: For further information, contact Central Semiconductor Corp. at (631) 435-1110 or visit their website at www.centralsemi.com.

Catalog excerpts

PRODUCT BRIEF conductor Corp. Central Semiconductor's CWDM3011N and CWDM3011P are high current enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer high current, low rpsfON). low threshold voltage, and low gate charge. • High current • Load/Power switches • Power supply converter circuits • Battery powered portable equipment • Energy efficiency • High power density • Industry standard package To request samples visit: Order your selection guide today. Visit: web.centralsemi.com/search/sample.php Typical Electrical Characteristics N-Channel Typical Output Characteristics 145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com

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CWDM3011N (Single, N-Channel) 30V, 11 A, MOSFETs CWDM3011P (Single, P-Channei) in the SOIC-8 package Sample devices available upon request. To order samples visit: www.centralsemi.com/info/CWDM3011 Semiconductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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