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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR - 1

CJD112 NPN CJD117 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DPAK TRANSISTOR CASE Central Semiconductor Corp. TM R1 (26-August 2002) DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 2.0 A Peak Collector Current ICM 4.0 A Base Current IB 50 mA Power Dissipation PD 20 W Power Dissipation (TA=25°C) PD 1.75 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ÈJC 6.25 °C/W Thermal Resistance ÈJA 71.4 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO VCE=50V 20 µA ICEV VCE=80V, VBE(off)=1.5V 10 µA ICEV VCE=80V, VBE(off)=1.5V, TC=125°C 500 µA ICBO VCB=80V 10 µA ICBO VCB=100V 20 µA IEBO VEB=5.0V 2.0 mA BVCEO IC=30mA 100 V VCE(SAT) IC=2.0A, IB=8.0mA 2.0 V VCE(SAT) IC=4.0A, IB=40mA 3.0 V VBE(SAT) IC=4.0A, IB=40mA 4.0 V VBE(ON) VCE=3.0V, IC=2.0A 2.8 V hFE VCE=3.0V, IC=0.5A 500 hFE VCE=3.0V, IC=2.0A 1000 12000 hFE VCE=3.0V, IC=4.0A 200 fT VCE=10V, IC=750mA, f=1.0MHz 25 MHz Cob VCB=10V, IE=0, f=0.1MHz (CJD112) 100 pF Cob VCB=10V, IE=0, f=0.1MHz (CJD117) 200 pF

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR - 2

Central Semiconductor Corp. TM DPAK TRANSISTOR CASE - MECHANICAL OUTLINE CJD112 NPN CJD117 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR R1 (26-August 2002) LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING CODE: FULL PART NUMBER

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