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CMXD3003TO Surface mount Diode-Low Leakage Triple

CMXD3003TO Surface mount Diode-Low Leakage Triple

CMXD3003TO Surface mount Diode-Low Leakage Triple

Product catalog summary
Description: The CENTRAL SEMICONDUCTOR CMXD3003TO is a surface mount device consisting of three isolated low leakage silicon switching diodes in a SUPERmini SOT-26 package. It is designed for low leakage switching applications and can be configured as a 540V switching diode.
Marking Code: C03TO
Maximum Ratings (at TA=25°C):
  • Continuous Reverse Voltage (VR): 180 V
  • Average Forward Current (IO): 200 mA
  • Continuous Forward Current (IF): 600 mA
  • Peak Repetitive Forward Current (IFRM): 700 mA
  • Peak Forward Surge Current (tp=1.0µs, IFSM): 2.0 A
  • Peak Forward Surge Current (tp=1.0s, IFSM): 1.0 A
  • Power Dissipation (PD): 350 mW
  • Operating and Storage Junction Temperature (TJ, Tstg): -65 to +150 °C
  • Thermal Resistance (ΘJA): 357 °C/W
Electrical Characteristics per Diode (at TA=25°C unless otherwise noted):
  • Reverse Current (IR) at VR=125V: 1.0 nA
  • Reverse Current (IR) at VR=125V, TA=150°C: 3.0 µA
  • Reverse Current (IR) at VR=180V: 10 nA
  • Reverse Current (IR) at VR=180V, TA=150°C: 5.0 µA
  • Breakdown Voltage (BVR) at IR=5.0µA: 200 V
  • Forward Voltage (VF) at IF=1.0mA: 0.62 - 0.72 V
  • Forward Voltage (VF) at IF=10mA: 0.72 - 0.83 V
  • Forward Voltage (VF) at IF=50mA: 0.80 - 0.89 V
  • Forward Voltage (VF) at IF=100mA: 0.83 - 0.93 V
  • Forward Voltage (VF) at IF=200mA: 0.87 - 1.10 V
  • Forward Voltage (VF) at IF=300mA: 0.90 - 1.15 V
  • Capacitance (CT) at VR=0, f=1.0MHz: 4.0 pF
Applications:
  • Voltage Multiplier
  • Steering Diode Array
  • General Purpose Switching
Mechanical Outline: The device is housed in a SOT-26 case with specific lead configurations for anodes and cathodes.
Optional Mounting Pads: Available for 540V series configuration with dimensions provided in mm.
See more

Catalog excerpts

CMXD3003TO Surface mount Diode-Low Leakage Triple-1

CMXD3003TO SURFACE MOUNT TRIPLE ISOLATED OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD3003TO consists of three (3) Isolated Low Leakage Silicon Switching Diodes arranged in an alternating configuration in a SUPERmini SOT-26 surface mount package, and is designed for low leakage switching applications. This device can be configured as a 540V switching diode. See optional mounting pad configuration. MARKING CODE: C03TO APPLICATIONS: • Voltage Multiplier • Steering Diode Array • General Purpose Switching MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Average Forward Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0µs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance IFRM IFSM ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=125V 1.0 IR IR IR

 Open the catalog to page 1
CMXD3003TO Surface mount Diode-Low Leakage Triple-2

SURFACE MOUNT TRIPLE ISOLATED OPPOSING SILICON SWITCHING DIODES Semiconductor corp. SOT 26 CASE - MECHANICAL OUTLINE LEAD CODE: OPTIONAL MOUNTING PADS

 Open the catalog to page 2

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