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CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel)

CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel)

Product catalog summary

Overview: The document provides technical specifications and features of the CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel) MOSFETs, which are complementary enhancement-mode devices housed in the SOT-523 package. These MOSFETs are designed for high-speed pulsed amplifiers, load/power switches, power supply converter circuits, power management, and motor drives.

Electrical Characteristics: Both N-Channel and P-Channel MOSFETs have a breakdown voltage (BVDSS) of 30V and a maximum drain current (ID) of 450mA. The gate-source threshold voltage (VGS(th)) ranges from 0.5V to 1.0V. The N-Channel has a typical on-resistance (rDS(ON)) of 0.28Ω, while the P-Channel has a typical on-resistance of 1.0Ω. The devices are designed to operate within a temperature range of -65°C to +150°C.

Thermal Characteristics: The maximum power dissipation (PD) for both devices is 250mW. The thermal characteristics ensure reliable operation under specified conditions.

Features and Benefits: Key features include low rDS(ON), low threshold voltage, logic level compatibility, low gate charge, and ESD protection up to 2kV. These features contribute to energy efficiency and integrated transient protection, making them suitable for various applications.

Mechanical and Packaging Information: The MOSFETs are available in the SOT-523 package with specific pinouts for gate, source, and drain. They are supplied on 7” reels with a maximum of 3,000 pieces per reel. The devices are taped according to the Electronic Industries Association Standard EIA-481-1-A.

Ordering and Samples: Samples of these devices can be ordered through the Central Semiconductor website. The marking codes for the devices are 74C for CMUDM7004 and 84C for CMUDM8004.

Catalog excerpts

CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel)-1

PRODUCT BRIEF Semiconductor Corp. are complementary Enhancement-mode MOSFETs featuring Low ros(on) ar|d Low Threshold Voltages. The devices have closely matched reverse voltage, drain current and gate threshold ratings, making them the ideal MOSFET pair for complementary applications. • Logic level compatible • High speed pulsed amplifiers • Load/Power switches • Power supply converter circuits • Power management • Motor drives • Closely matched reverse and forward characteristics • Energy efficiency • Integrated transient protection Order your selection guide today. Visit: web.centralsemi.com/search/sample.php Typical Output Characteristics VQS, Drain-Source Voltage (Volts) To order samples of these devices visit: T^=25"C Electrical Characteristics Thermal Characteristics 145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com

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CMUDM7004 (N-Channel) and CMUDM8004 (P-Channel)-2

Sample devices available upon request. To order samples of these devices visit: www.centralsemi.com/info/CMUDM * conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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