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Central Semiconductor
CMPDM203NH (20V, 3.2A N-Channel)

CMPDM203NH (20V, 3.2A N-Channel)

Product catalog summary

Overview: The Central Semiconductor CMPDM203NH is an N-Channel Enhancement-mode MOSFET designed for high current capability and energy efficiency, housed in the SOT-23F package. It is suitable for energy-sensitive applications requiring higher drain currents.

Key Features:

Low on-resistance (rDS(ON)) of 0.033Ω at VGS = 4.5V.
High current capability with ID = 3.2A.
Low gate charge (Qgs) of 0.8nC.
Fast switching speed with a turn-on time (ton) of 6.0ns.
9% lower package profile compared to SOT-23.

Applications:

Load/Power switches.
Power supply converter circuits.
Battery-powered portable equipment.
Motor control.

Electrical Characteristics:

Breakdown Voltage (BVDSS): 20V.
Threshold Voltage (VGS(th)): 0.6V to 1.2V.
Input Capacitance (Ciss): 395pF.
Reverse Transfer Capacitance (Crss): 44pF.
Power Dissipation (PD): 350mW.
Operating and Storage Temperature Range (TJ, Tstg): -55 to +150°C.
Thermal Resistance (ΘJA): 357°C/W.

Packaging and Ordering Information:

Available in 7” reels containing 3,000 pieces.
Devices are taped according to EIA-481-1-A standards.
Marking Code: 203C.

Contact Information: For samples and further information, contact Central Semiconductor Corp. at (631) 435-1110 or visit their website.

Catalog excerpts

PRODUCT BRIEF conductor Corp. The Central Semiconductor CMPDM203NH is an N-Channel Enhancement-mode MOSFET that optimizes high current capability and energy efficiency in the industry standard SOT-23F package. The combination of high current, low gate charge and low on-resistance makes this device the ideal selection for energy sensitive applications that require higher drain currents. • Load/Power switches • Power supply converter circuits • Battery powered portable equipment • Motor control • Energy efficiency • 9% lower package profile than the SOT-23 • Fast switching speed ton = 6.0ns To order samples of this device visit: Typical Electrical Characteristics CMPDM203NH Typical Output Characteristics CMPDM203NH Typical Drain Source On Resistance 145 Adams Avenue • Hauppauge • New York • 11788 * USA* www.centralsemi.com

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Sample devices available upon request. To order samples of this device visit: www.centralsemi.com/info/CMPDM203NH * conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.

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