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CMLM0605

Product catalog summary

Description: The CENTRAL SEMICONDUCTOR CMLM0605 is a compact module combining a PNP transistor and a Schottky diode in a SOT-563 package, ideal for small signal applications prioritizing size and efficiency. It is complemented by the CMLM0405 device.

Specifications:

Marking Code: C65
Power Dissipation: 350 mW
Operating Temperature: -65 to +150 °C
Thermal Resistance: 357 °C/W

Maximum Ratings:

Transistor (Q1):
- Collector-Base Voltage: 60 V
- Collector-Emitter Voltage: 40 V
- Emitter-Base Voltage: 6.0 V
- Continuous Collector Current: 200 mA
Diode (D1):
- Peak Reverse Voltage: 40 V
- Continuous Forward Current: 500 mA
- Peak Forward Current: 3.5 A
- Surge Current: 10 A

Electrical Characteristics:

Transistor (Q1):
- VCE(SAT) ranges from 0.050 to 0.200 V depending on current conditions.
- hFE varies from 30 to 300 based on collector current.
- Transition frequency (fT): 300 MHz
Diode (D1):
- Reverse Current (IR) at 10V: 20 μA
- Forward Voltage (VF) ranges from 0.13 V to 0.47 V depending on forward current.

Mechanical Outline: The device is housed in a SOT-563 case.

Support and Services: Central Semiconductor offers extensive support including supply management, custom packaging, and design assistance. They provide free samples, technical data, and compliance with environmental regulations.

Ordering Information: For Tin/Lead or Lead-Free plating, add "TIN/LEAD" or "PBFREE" to the part number.

Catalog excerpts

CMLM0605 MULTI DISCRETE MODULE™ SURFACE MOUNT SILICON LOW VCE(SAT) NPN TRANSISTOR AND LOW VF SCHOTTKY DIODE Central Semiconductor Corp. www.centralsemi.com DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLM0605 is a single PNP transistor and Schottky diode packaged in a space saving SOT-563 case is designed for small signal general purpose applications where size and operational efficiency are prime requirements. • Complementary Device: CMLM0405 • Combination Low Vce(SAT) Transistor and Low Vf Schottky Diode. MARKING CODE: C65 MAXIMUM RATINGS - CASE: (TA=25°C) SYMBOL Power Dissipation Pd Operating and Storage Junction Temperature Tj, Tstg Thermal Resistance ©JA MAXIMUM RATINGS - Q1: (TA=25°C) SYMBOL Collector-Base Voltage Vcbo Collector-Emitter Voltage Vceo Emitter-Base Voltage Vebo Continuous Collector Current Ic MAXIMUM RATINGS - D1: (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage Vrrm Continuous Forward Current Ip Peak Repetitive Forward Current, tp<1.0ms Ifrm Peak Forward Surge Current, tp=8.0ms IFSM UNITS mW °C °C/W UNITS V V V mA UNITS V mA A A ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless SYMBOL TEST CONDITIONS MIN UNITS nA V V V V V V V

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CMLM0605 MULTI DISCRETE MODULE™ SURFACE MOUNT SILICON LOW VCE(SAT) NPN TRANSISTOR AND LOW VF SCHOTTKY DIODE CsntrqTSemiconductor corp. ELECTRICAL CHARACTERISTICS - Q1 - Continued: SYMBOL TEST CONDITIONS MIN MAX UNITS MS dB ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE DIMENSIONS LEAD CODE:

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CsntrqT Semiconductor corp. OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central's operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central's applications engineering team is ready to • Free quick ship samples (2nd day air) • Online technical data and parametric search • SPICE models • Custom electrical curves • Environmental regulation compliance • Customer...

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CMLM0605

CMLM0605

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