Description: The CENTRAL SEMICONDUCTOR CMLD2004 series consists of dual high voltage silicon switching diodes. These are manufactured using the epitaxial planar process and are epoxy molded in a PICOmini™ surface mount package. They are designed for applications requiring high voltage capability.

Maximum Ratings (at TA=25°C):

• Continuous Reverse Voltage (VR): 240 V
• Peak Repetitive Reverse Voltage (VRRM): 300 V
• Peak Repetitive Reverse Current (IO): 200 mA
• Continuous Forward Current (IF): 225 mA
• Peak Repetitive Forward Current (IFRM): 625 mA
• Peak Forward Surge Current (tp=1.0μs) (IFSM): 4.0 A
• Peak Forward Surge Current (tp=1.0s) (IFSM): 1.0 A
• Power Dissipation (PD): 250 mW
• Operating and Storage Junction Temperature (TJ, Tstg): -65 to +150 °C
• Thermal Resistance (ΘJA): 500 °C/W

Electrical Characteristics per Diode (at TA=25°C unless otherwise noted):

• Reverse Current (IR) at VR=240V: 100 nA
• Reverse Current (IR) at VR=240V, TA=150°C: 100 μA
• Breakdown Voltage (BVR) at IR=100μA: 300 V
• Forward Voltage (VF) at IF=100mA: 1.0 V
• Capacitance (CT) at VR=0, f=1.0MHz: 5.0 pF
• Reverse Recovery Time (trr) at IF=IR=30mA, Rec. to 3.0mA, RL=100Ω: 50 ns

Available Configurations:

• CMLD2004: Dual, Isolated (Marking Code: 04D)
• CMLD2004A: Dual, Common Anode (Marking Code: 04A)
• CMLD2004C: Dual, Common Cathode (Marking Code: 04C)
• CMLD2004S: Dual, In Series (Marking Code: 04S)
• CMLD2004DO: Dual, Isolated Opposing (Marking Code: 04O)

Mechanical Outline: The diodes are housed in a SOT-563 case with specific pin configurations for each model, ensuring proper connectivity for various circuit designs.