SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES Semiconductor corp. SERIES contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package, designed for applications requiring high voltage capability. The following configurations are available: CMLD2004A DUAL, COMMON ANODE CMLD2004C DUAL, COMMON CATHODE CMLD2004DO DUAL, ISOLATED OPPOSING MAXIMUM RATINGS: (TA=25°C) SYMBOL Continuous Reverse Voltage VR 240 Peak Repetitive Reverse Voltage VRRM ^00 Peak Repetitive Reverse Current IQ 200 Continuous Forward Current lp 225 Peak Repetitive Forward Current 'FRM 625 Peak Forward Surge Current, tp=1.0us 'FSM 4.0 Peak Forward Surge Current, tp=1.0s 'FSM 1-0 Operating and Storage Junction Temperature Tj, Ts(g -65 to +150 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS

SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES Semiconductor corp. SOT-563 CASE - MECHANICAL OUTLINE MARKING CODES: LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: LEAD CODE: