CJD112 Surface mount Transistor-Bipolar Power NPN Darlington

Product catalog summary

Description: The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are complementary silicon power Darlington transistors designed for low-speed switching and amplifier applications. They are manufactured in a surface mount package.

Marking: The full part number is used for marking.

Maximum Ratings:

Collector-Base Voltage (VCBO): 100 V
Collector-Emitter Voltage (VCEO): 100 V
Emitter-Base Voltage (VEBO): 5.0 V
Continuous Collector Current (IC): 2.0 A
Peak Collector Current (ICM): 4.0 A
Continuous Base Current (IB): 50 mA
Power Dissipation (PD): 20 W
Power Dissipation at TA=25°C: 1.75 W
Operating and Storage Junction Temperature (TJ, Tstg): -65 to +150 °C
Thermal Resistance (ΘJC): 6.25 °C/W
Thermal Resistance (ΘJA): 71.4 °C/W

Electrical Characteristics:

Collector-Emitter Leakage Current (ICEO) at VCE=50V: 20 μA max
Collector-Emitter Leakage Current (ICEV) at VCE=80V, VBE(off)=1.5V: 10 μA max
Collector-Emitter Leakage Current (ICEV) at VCE=80V, VBE(off)=1.5V, TC=125°C: 500 μA max
Collector-Base Leakage Current (ICBO) at VCB=80V: 10 μA max
Collector-Base Leakage Current (ICBO) at VCB=100V: 20 μA max
Emitter-Base Leakage Current (IEBO) at VEB=5.0V: 2.0 mA max
Collector-Emitter Breakdown Voltage (BVCEO) at IC=30mA: 100 V min
Saturation Voltage (VCE(SAT)) at IC=2.0A, IB=8.0mA: 2.0 V max
Saturation Voltage (VCE(SAT)) at IC=4.0A, IB=40mA: 3.0 V max
Base-Emitter Saturation Voltage (VBE(SAT)) at IC=4.0A, IB=40mA: 4.0 V max
Base-Emitter On Voltage (VBE(ON)) at VCE=3.0V, IC=2.0A: 2.8 V max
DC Current Gain (hFE) at VCE=3.0V, IC=0.5A: 500 min
DC Current Gain (hFE) at VCE=3.0V, IC=2.0A: 1000 min, 12000 max
DC Current Gain (hFE) at VCE=3.0V, IC=4.0A: 200 min
Transition Frequency (fT) at VCE=10V, IC=750mA, f=1.0MHz: 25 MHz min
Output Capacitance (Cob) at VCB=10V, IE=0, f=0.1MHz: 100 pF max for CJD112, 200 pF max for CJD117

Mechanical Outline: The transistors are housed in a DPAK case with the following lead configuration: 1) Base, 2) Collector, 3) Emitter, 4) Collector.

Catalog excerpts

CJD112 Surface mount Transistor-Bipolar Power NPN Darlington-1

SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA ELECTRICAL SYMBOL ICEO ICEV ICEV ICBO ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE fT Cob Cob

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