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CEDM7002AE

Product catalog summary

Product Overview: The CEDM7002AE is an ESD-protected version of the 2N7002 enhancement-mode N-channel MOSFET, designed for high-speed pulsed amplifier and driver applications. It is housed in a SOT-883L package.

Specifications: The MOSFET operates with a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 300mA. It has a power dissipation (PD) of 350mW and operates within a temperature range of -65°C to +150°C. The threshold voltage (VGS(th)) ranges from 1.2V to 2.0V, and the on-resistance (rDS(ON)) is low, enhancing efficiency.

Electrical Characteristics: The device features a low gate charge (Qgs) and capacitance (Ciss and Crss), which are critical for high-speed applications. The ESD protection is rated up to 1800V.

Benefits and Features: The CEDM7002AE offers energy efficiency, enhanced electrical specifications, and occupies 91% less board space compared to the SOT-23 package. It is suitable for load/power switches, DC-DC converter circuits, and power management applications.

Packaging and Ordering Information: The MOSFET is available in 7” reels, with a maximum of 8,000 parts per reel. The packaging follows the EIA-481-1-A standard for tape dimensions and orientation.

Mechanical and Mounting Details: The document provides mechanical drawings, pinout details, and mounting pad geometry for proper installation.

Contact Information: For further inquiries or to request samples, contact Central Semiconductor Corp. at (631) 435-1110 or visit their website.

Catalog excerpts

60V, 300mA N-Channel MOSFET in SOT-883L package Bottom View Typical Electrical Characteristics Central Semiconductor’s CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for high speed pulsed amplifier and driver applications. ESD protection up to 1800V 350mW power dissipation Low gate charge Low rDS(ON) Applications: • Load/Power switches • DC-DC converter circuits • Power management Benefits: • Energy efficiency • Enhanced electrical specifications Package Prole Comparison: The SOT-883L utilizes 91% less board space than the SOT-23 1.05 mm 3.05mm To request samples visit: www.centralsemi.com/info/CMPDM7002AE The SOT-882L has a 63% lower prole than the SOT-23 1.09mm Weblink Use QR reader for direct link to product web page, or use: www.centralsemi.com/info/CEDM7002AE Order your selection guide today. Visit: web.centralsemi.com/search/sample.php Maximum Ratings (TA = 25˚C unless otherwise noted) VDS Electrical Characteristics: (TA = 25˚C unless otherwise noted) BVDSS *Enhanced electrical specifications

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Mechanical Drawing Sample devices available upon request. To order samples visit: www.centralsemi.com/info/CEDM7002AE conductor Corp. Innovative Discrete For further information contact: Sales at Central Semiconductor Corp. www.centra lsemi.com 145 Adams Avenue • Hauppauge • New York • 11788 • USA • Tel:(631) 435-1110 • Fax:(631) 435-1824

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