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CEDM7001 Surface mount MOSFET N-Channel Enhancement Mode

CEDM7001 Surface mount MOSFET N-Channel Enhancement Mode

Product catalog summary

Description: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode Silicon MOSFET designed for high-speed pulsed amplifier and driver applications. It features low rDS(ON) and low threshold voltage, making it suitable for efficient performance in various electronic applications.

Maximum Ratings: The MOSFET operates at a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 10V. It supports a continuous drain current (ID) of 100mA and a peak drain current (IDM) of 200mA with a power dissipation of 100mW. The operating and storage junction temperature ranges from -65°C to +150°C.

Electrical Characteristics: Key parameters include a gate-source leakage current (IGSSF, IGSSR) of 1.0 μA, a drain-source leakage current (IDSS) of 1.0 μA, and a breakdown voltage (BVDSS) of 20V. The threshold voltage (VGS(th)) ranges from 0.6V to 0.9V. The on-resistance (rDS(ON)) varies with gate-source voltage, being 0.9 to 3.0 Ω at VGS=4.0V, 1.3 to 4.0 Ω at VGS=2.5V, and 15 Ω at VGS=1.5V. Total gate charge (Qg(tot)) is 0.566 nC, with gate-source charge (Qgs) at 0.16 nC and gate-drain charge (Qgd) at 0.08 nC. The forward transconductance (gFS) is 100 mS, and capacitances include Crss at 4.0 pF, Ciss at 9.0 pF, and Coss at 9.5 pF. Turn-on time (ton) is 50 ns, and turn-off time (toff) is 75 ns.

Features: The MOSFET offers 100mW power dissipation, a low package profile of 0.4mm, low rDS(ON), low threshold voltage, and logic level compatibility. It is housed in a small, TLP™ 1x0.6mm, SOT-883L leadless surface mount package.

Applications: The CEDM7001 is ideal for use in load/power switches, DC-DC converters, and battery-powered portable equipment.

Mechanical Outline: The SOT-883L case includes lead codes for the gate, source, and drain, with a marking code of 'H'.

Catalog excerpts

CEDM7001 Surface mount MOSFET N-Channel Enhancement Mode-1

CEDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage. MARKING CODE: H APPLICATIONS: • Load/Power Switches • DC - DC Converters • Battery Powered Portable Equipment FEATURES: • 100mW Power Dissipation • 0.4mm Low Package Profile • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, TLP™ 1x0.6mm, SOT-883L Leadless Surface Mount Package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Peak Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature

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CEDM7001 Surface mount MOSFET N-Channel Enhancement Mode-2

SURFACE MOUNT SILICON MOSFET Semiconductor corp. SOT-883L CASE - MECHANICAL OUTLINE

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