CDM2205-800FP SILICON N-CHANNEL POWER MOSFET 5.0 AMP, 800 VOLT Central Semiconductor Corp. www.centralsemi.com DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM2205-800FP is an 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING CODE: CDM05-800FP APPLICATIONS: • Power Factor Correction • Alternative energy inverters • Solid State Lighting FEATURES: • High voltage capability (Vds=800V) • Low gate charge (Qg(tot)=17.4nC TYP) • Low rDS(ON) (2.20 TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage Vds Gate-Source Voltage Vqs Continuous Drain Current (Steady State) Id Maximum Pulsed Drain Current, tp=10gs Idm Continuous Source Current (Body Diode) Is Maximum Pulsed Source Current (Body Diode) Ism Single Pulse Avalanche Energy (Note 1) EAS Power Dissipation PD Operating and Storage Junction Temperature Tj, Tstg Thermal Resistance ©JC Thermal Resistance ©JA UNITS V V A A A A mJ W °C °C/W °C/W SYMBOL IGSSF, IGSSR IDSS BVDSS VGS(th) VSD rDS(ON) Crss Ciss unless otherwise noted) MIN TYP

SILICON N-CHANNEL POWER MOSFET 5.0 AMP, 800 VOLT ELECTRICAL CHARACTERISTICS - Continued: (TC=25 SYMBOL TEST CONDITIONS Qg(tot) VDs=640V, VGs=10V, Id=5.0A (Note 2) C unless otherwise noted) Note 2: Pulse Width < 300hs, Duty Cycle < 2% CsntrqTSemiconductor corp. UNITS nC nC nC ns ns ns ns ns hC TO-220FP CASE - MECHANICAL OUTLINE DIMENSIONS LEAD CODE: 1) Gate 2) Drain 3) Source MARKING CODE: CDM05-800FP

CDM2205-800FP SILICON N-CHANNEL POWER MOSFET 5.0 AMP, 800 VOLT TYPICAL ELECTRICAL CHARACTERISTICS

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