CDM22010-650 SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT Central Semiconductor Corp. www.centralsemi.com DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. MARKING CODE: CDM10-650 APPLICATIONS: • Power Factor Correction • Motor drives • Alternative energy inverters • Solid state lighting FEATURES: • High voltage capability (Vds=650V) • Low gate charge (Qgs=8.0nC) • Low rDS(ON) (0.880) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Drain-Source Voltage Vds Gate-Source Voltage Vqs Continuous Drain Current (Steady State) Id Maximum Pulsed Drain Current, tp=10gs Idm Continuous Source Current (Body Diode) Is Maximum Pulsed Source Current (Body Diode) Ism Single Pulse Avalanche Energy (Note 1) EAS Power Dissipation PD Power Dissipation (Tc=25°C) Pd Operating and Storage Junction Temperature Tj, Tstg Thermal Resistance ©JC Thermal Resistance ©JA UNITS V V A A A A mJ W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise SYMBOL TEST CONDITIONS MIN

SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS Qg(tot) VDs=520V, VGs=10V, Id=10A (Note 2) Note 2: Pulse Width < 300hs, Duty Cycle < 2% TO-220 CASE - MECHANICAL OUTLINE CsntrqTSemiconductor corp. UNITS nC nC nC ns ns ns ns ns hC PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source Tab) Drain MARKING CODE: CDM10-650

Central Semlconc SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT TYPICAL ELECTRICAL CHARACTERISTICS Output Characteristics Drain Source On Resistance

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