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CBRHDSH2-100

Product catalog summary

Description: The CBRHDSH2-100 is a full wave bridge rectifier designed for surface mount applications. It features a durable epoxy case and utilizes glass passivated chips. The marking code for this device is CSH10.

Features:

Low leakage current of 700nA typical at VRRM.
High current rating of 2.0A.
Low forward voltage (VF) Schottky diodes with a maximum of 840mV at IF=2.0A.

Maximum Ratings:

Peak Repetitive Reverse Voltage (VRRM): 100 V
DC Blocking Voltage (VR): 100 V
RMS Reverse Voltage (VR(RMS)): 70 V
Average Forward Current (IO) at 75°C: 2.0 A
Peak Forward Surge Current (IFSM): 50 A
Operating Junction Temperature (TJ): -50 to +125 °C
Storage Temperature (Tstg): -50 to +150 °C

Electrical Characteristics per Diode:

Reverse Current (IR) at VR=100V: 0.70 to 4.0 µA
Forward Voltage (VF) at IF=500mA: 610 mV
Forward Voltage (VF) at IF=1.0A: 700 mV
Forward Voltage (VF) at IF=2.0A: 770 to 840 mV
Junction Capacitance (CJ) at VR=4.0V, f=1.0MHz: 250 pF

Additional Information: The device is designed to be halogen-free. For the latest terms and conditions, visit Central Semiconductor's website.

Support and Services: Central Semiconductor offers extensive support including supply management, custom bar coding, inventory bonding, and consolidated shipping options. They also provide designer support with free samples, technical data, SPICE models, and custom product development.

Contact Information: Central Semiconductor Corp., 145 Adams Avenue, Hauppauge, NY 11788 USA. Main Tel: (631) 435-1110. For more details, visit their website.

Catalog excerpts

CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH2-100 is a full wave bridge rectifier mounted in a durable epoxy surface mount case, utilizing glass passivated chips. MARKING CODE: CSH10 FEATURES: • Low Leakage Current (700nA TYP @ Vrrm) • High 2.0A Current Rating • Low VF Schottky Diodes (840mV MAX @ IF=2.0A) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (Ta=75°C) Peak Forward Surge Current (8.3ms) Operating Junction Temperature Storage Temperature SYMBOL VRRM VR VR(RMS) IO IFSM TJ Tstg ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP

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CsntrqT Semiconductor corp. SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE

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CBRHDSH2-100 SURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER TYPICAL ELECTRICAL CHARACTERISTICS

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CsntrqT Semiconductor corp. OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central's operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central's applications engineering team is ready to • Free quick ship samples (2nd day air) • Online technical data and parametric search • SPICE models • Custom electrical curves • Environmental regulation compliance • Customer specific...

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CBRHDSH2-100

CBRHDSH2-100

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