SURFACE MOUNT HIGH DENSITY SILICON BRIDGE RECTIFIER epoxy surrace mount molded case, utilizing glass passivated chips. • Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. • This series is UL listed: file number E130224 • 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier. • Glass passivated chips for high reliability. Semiconductor corp. silicon full wave bridge rectifier mounted in a durable MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) ^0 V Average Forward Current (TA=40°C) (Notel) IQ 0.5 A Average Forward Current (TA=40°C) (Note 2) l0 0.8 A Peak Forward Surge Current 'FSM 30 A Operating and Storage Junction Temperature Tj, Ts(g -65 to+150 °C Thermal Resistance (Note 3) GJA 85 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS Notes: (1) Mounted on Glass-Epoxy PCB. (3) Mounted on PCB with 0.5" x 0.5" copper pads.

SURFACE MOUNT HIGH DENSITY SILICON BRIDGE RECTIFIER Semiconductor corp. HD DIP CASE - MECHANICAL OUTLINE