CBR1-D040S Surface mount Rectifer-Bridge General Purpose

Product catalog summary

Description: The CBR1-D020S series by Central Semiconductor is a silicon full wave bridge rectifier designed for surface mount applications. It features a durable epoxy molded case and utilizes glass passivated chips. Fast Recovery versions are available upon request.

Marking: The full part number is used for marking.

Maximum Ratings: The series includes models with varying peak repetitive reverse voltages (VRRM) and DC blocking voltages (VR), ranging from 200V to 1000V. The average forward current is 1.0A, with a peak forward surge current of 50A. The fusing rating for a time less than 8.35ms is 10 A²s. Operating and storage junction temperatures range from -65°C to +150°C.

Electrical Characteristics per Diode: At 25°C, the reverse current (IR) is 10µA, increasing to 0.5mA at 125°C. The forward voltage (VF) at 1.0A is 1.1V, and the junction capacitance (CJ) at 4.0V and 1.0MHz is 25pF.

Mechanical Outline: The rectifiers are housed in an SMDIP case, with the full part number used for marking.

Catalog excerpts

CBR1-D040S Surface mount Rectifer-Bridge General Purpose-1

SURFACE MOUNT SILICON BRIDGE RECTIFIER SMDIP CASE Semiconductor corp. The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Peak Repetitive Reverse Voltage VRRM Average Forward Current (T^=50°C) IQ Peak Forward Surge Current 'FSM ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

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