BAS28 Surface mount Diode-Switching Dual
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Catalog excerpts

SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES Semiconductor corp. The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 75 V Peak Repetitive Reverse Voltage VRRM 85 V Continuous Forward Current lp 250 mA Peak Repetitive Forward Current IFRM 500 mA Peak Forward Surge Current, tp=1.0us IFSM 4.0 A Peak Forward Surge Current, tp=1.Oms IFSM 2.0 A Peak Forward Surge Current, tp=1.0s IFSM 1-0 A Operating and Storage Junction Temperature Tj, Ts(g -65 to+150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS

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