BAS28 Surface mount Diode-Switching Dual

Product catalog summary

Description: The CENTRAL SEMICONDUCTOR BAS28 is a dual, isolated high-speed silicon switching diode designed for high-speed switching applications. It is manufactured using the epitaxial planar process and comes in an epoxy molded SOT-143 surface mount case.

Marking Code: A61 or JTW

Maximum Ratings (at TA=25°C):

Continuous Reverse Voltage (VR): 75 V
Peak Repetitive Reverse Voltage (VRRM): 85 V
Continuous Forward Current (IF): 250 mA
Peak Repetitive Forward Current (IFRM): 500 mA
Peak Forward Surge Current (IFSM):
- tp=1.0μs: 4.0 A
- tp=1.0ms: 2.0 A
- tp=1.0s: 1.0 A
Power Dissipation (PD): 350 mW
Operating and Storage Junction Temperature (TJ, Tstg): -65 to +150 °C
Thermal Resistance (ΘJA): 357 °C/W

Electrical Characteristics per Diode (at TA=25°C unless otherwise noted):

Reverse Current (IR):
- VR=25V, TA=150°C: 30 μA
- VR=75V: 1.0 μA
- VR=75V, TA=150°C: 50 μA
Forward Voltage (VF):
- IF=1.0mA: 715 mV
- IF=10mA: 855 mV
- IF=50mA: 1.00 V
- IF=150mA: 1.25 V
Capacitance (CT): VR=0, f=1.0MHz: 2.0 pF
Reverse Recovery Time (trr): IF=IR=10mA, Irr=1.0mA, RL=100Ω: 6.0 ns
Charge Storage (Qs): IF=10mA, VR=5.0V, RL=500Ω: 45 pC
Forward Recovery Voltage (VFR): IF=10mA, tr=20ns: 1.75 V

Mechanical Outline: The SOT-143 case includes the following lead configuration:

1) Cathode D1
2) Cathode D2
3) Anode D2
4) Anode D1

Catalog excerpts

BAS28 Surface mount Diode-Switching Dual-1

SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES Semiconductor corp. The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 75 V Peak Repetitive Reverse Voltage VRRM 85 V Continuous Forward Current lp 250 mA Peak Repetitive Forward Current IFRM 500 mA Peak Forward Surge Current, tp=1.0us IFSM 4.0 A Peak Forward Surge Current, tp=1.Oms IFSM 2.0 A Peak Forward Surge Current, tp=1.0s IFSM 1-0 A Operating and Storage Junction Temperature Tj, Ts(g -65 to+150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS

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