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QUANTAX EBSD

Product catalog summary

Introduction
eWARP TKD is a cutting-edge detector from Bruker, designed for nanomaterials characterization in scanning electron microscopes (SEM) using an on-axis geometry. It excels in sensitivity, speed, spatial resolution, and data integrity, setting new standards in orientation and phase mapping of nanomaterials.

Key Features

Productivity: Achieves acquisition and indexing speeds up to 5,700 fps, providing orientation and phase maps within 1-5 minutes.
Spatial Resolution: Offers mapping with better than 2 nm spatial resolution when combined with a high-end FE-SEM.
Imaging Speed: DF- and BF-like imaging enabled by patented on-chip binning technology.
Time-Resolved Mapping: Capable of capturing real-time microstructural evolution during in-situ experiments.
Minimal Artifacts: Low beam requirements and ultrafast mapping eliminate the need for drift correction.
Delicate Sample Handling: Extreme signal efficiency allows for low-dose, low-kV TKD mapping of beam-sensitive materials.

Technical Specifications

Detection Method: CMOS/Direct Electron Detection
Active Area: 26 x 26 mm² silicon sensor
Pixel Size: 160 x 160 µm²
Dynamic Range: 15 bit (91db)
Operating Conditions: Accelerating voltage range of 2 kV – 30 kV, probe current < 2 nA
Pixel Resolution: Native 162 x 162 pixels, binned 18x18 pixels
Minimum Integration Time: 175 µs /10 µs
Radiation Hardening: Expected lifetime of at least 15,000 hours at 30 kV
Cooling System: Active - Peltier

Performance Results
The eWARP TKD demonstrates superior performance in nanomaterials characterization. An orientation map (IPFz) was acquired from a 15 nm gold thin film with a 2 nm step size. The map size was 4.3 Mpixels, covering an area of 5.1 µm x 3.9 µm, with a pixel size of 2 nm. The indexing rate was 92.5%, and the speed was 2873 patterns/second, resulting in a total map time of 25:13 minutes. The accelerating voltage was 30 kV, and the probe current was 2 nA. The analysis identified 108,506 grains smaller than 50 nm, with a mean equivalent grain diameter of 21.2 nm.

Conclusion
eWARP TKD offers unmatched performance for researchers and engineers working on nanomaterials, providing high-speed, high-resolution mapping with minimal artifacts and excellent data integrity.

Catalog excerpts

eWARP TKD Best Spatial Resolution. Maximum Throughput. Zero Compromise. eWARP TKD is the new member of the eWARP detector family, powered by Bruker’s cutting edge Wide Area Pixelated (WARP) sensor technology. Massive gains in productivity: With acquisition and indexing Purpose-built for nanomaterials characterization in the SEM using the “on-axis” geometry, eWARP TKD outperforms existing solutions across all key metrics, e.g., sensitivity, speed, spatial resolution and data integrity. The groundbreaking signal efficiency and speed of eWARP TKD set new standards in the orientation and phase mapping of nanomaterials. Featuring a new, larger pixelated sensor with a resolution of 162 x 162 pixels and an active area exceeding 26 x 26 mm2 , eWARP TKD delivers a powerful set of advantages for researchers and engineers working on nanomaterials: Innovation with Integrity speeds of up to 5,700 fps, eWARP TKD delivers orientation and phase maps within 1 - 5 minutes, while maintaining excellent data quality and integrity. Unmatched spatial resolution: Combined with a high-end FE-SEM eWARP TKD delivers mapping at better than 2 nm spatial resolution. DF- and BF-like imaging at lightning speed: Enabled by eWARP’s patented on-chip binning technology. Time resolved mapping during in-situ experiments: Rapidly acquire maps and images every few seconds to capture real-time microstructural evolution in electron-transparent samples during in-situ heating and mechanical testing. No drift correction, minimal artifacts: Thanks to low beam requirements and ultrafast mapping, eWARP TKD renders drift correction obsolete. Engineered for delicate samples: Extreme signal efficiency enables low-dose, low-kV TKD mapping for beam-sensitive materials.

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Figure 1 Orientation map (IPFz) acquired from a gold thin film sample and corresponding crystal size dis50 nm tribution and stats. Please note that no data cleaning was applied and that “crystals” with less than 5 pixels were excluded from the histogram and statistics. Map size: 4.3 Mpixels / 5.1 µm x 3.9 µm Pixel size: 2 nm Indexing rate: 92.5 % Speed: 2873 patterns/second Total map time: 25:13 min Accelerating voltage: 30 kV Probe current: 2 nA Grains < 50 nm: 108,506 Mean equivalent grain diameter: 21.2 nm Technical Specifications Chip technology/Detection method CMOS/Direct Electron Detection...

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