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R-A M-13 1310nm Intensity Modulator

R-A M-13 1310nm Intensity Modulator

R-A M-13 1310nm Intensity Modulator

Product catalog summary
Overview: The document provides technical specifications for the R-AM-13, a 1310nm Intensity Modulator manufactured by Beijing Rofea Optoelectronics Co., Ltd. This modulator is used in high-speed optical communication systems, laser sensing, and Radio over Fiber (ROF) systems.
Features:
  • Low insertion loss
  • 2.5GHz bandwidth
  • Low half-wave voltage
  • Customization options available
Applications:
  • ROF systems
  • Quantum key distribution
  • Laser sensing systems
  • Side-band modulation
Optical Parameters:
  • Operating wavelength: 1290-1330 nm
  • Insertion loss: 4-5 dB
  • Optical return loss: -45 dB
  • Switch extinction ratio @DC: 20-23 dB
  • Dynamic extinction ratio: 13 dB
Electrical Parameters:
  • Operating bandwidth (-3dB): 2.5 GHz
  • Half-wave voltage RF: 3-4 V
  • Bias voltage: 3.5-4.5 V
  • Electrical return loss: -12 to -10 dB
  • Input impedance RF: 50 Ω
  • Bias impedance: 1M Ω
Limitations:
  • Input optical power: Max 20 dBm
  • Input RF power: Max 28 dBm
  • Bias voltage range: -15 to 15 V
  • Operating temperature: -10 to 60°C
  • Storage temperature: -40 to 85°C
  • Humidity: 5 to 90%
Ordering Information: The product can be customized based on type, wavelength, operating bandwidth, fiber type, and optical connector.
Mechanical Diagram: The document includes a mechanical diagram detailing the input and output ports, RF input port, and bias control port. Additional information on the RF driver and bias control circuit board is available on the company's website or via contact.
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Catalog excerpts

R-A M-13 1310nm Intensity Modulator-1

We Manufacture Integrated LN Modulators Beijing Rofea Optoelectronics Co., Ltd. 1310nm Intensity Modulator The LiNbO3 intensity modulator is widely used in high-speed optical communication system, laser sensing and ROF systems because of well electro-optic effect. The R-AM series based on MZ structure and X-cut design, has stable physical and chemical characteristics, which can be applied both in laboratory experiments and industrial systems. Features     Low insertion loss Bandwidth: 2.5GHz Low half-wave voltage Customization option ROF systems Quantum key distribution Laser sensing systems Side-band modulation Optical parameters Parameter Operating wavelength Insertion loss Optical return loss Switch extinction ratio @DC Dynamic extinction ratio Optical fiber Input port output port Optical fiber interface

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R-A M-13 1310nm Intensity Modulator-2

Beijing Rofea Photonics Co., Ltd Electrical parameters Parameter Half-wave voltage Electrical return loss Input impedance Electrical interface Symbol Pin,Max Input optical power Operating temperature Storage temperature bias voltage Type: AM---Intensity Modulator Operating bandwidth: In-Out Fiber type: 2.5G---10GHz PP---PM/PM 10G---10GHz PS---PM/SMF 20G---10GHz XX Optical connector: FA---FC/APC FP---FC/PC XX---Customizatio

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R-A M-13 1310nm Intensity Modulator-3

Beijing Rofea Photonics Co., Ltd Mechanical Diagram Optical input port Optical output port Bias control port RF Driver and Bias control circuit board information are provided on website (www.bjrofoc.com), you can also contact us for more information by email ([email protected]) or WhatsApp(+86-18978968297)

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