AMMC-2008 DC?50 GHz SPDT Switch
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Data Sheet Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 930 x 630 µm (36.6 x 24.8 mils) ±10 µm (±0.4 mils) 100 ± 10 µm (4 ± 0.4 mils) 80 x 80 µm (3.2 x 3.2 mils) Avago’s AMMC-2008 is a monolithic PHEMT SPDT switch with low insertion loss and high isolation from DC to 50 GHz. This MMIC is designed for general-purpose applications. For ­improved reliability and moisture protection, the die is passivated at the ­active areas. One series and two shunt PHEMTs per throw provide 2.0 dB insertion loss and 28 dB isolation at 40 GHz. • Wide frequency range: DC – 50 GHz Absolute Maximum Ratings [1] Symbol Parameters/Conditions Storage Temperature Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. • Single pole double throw switch • Low insertion loss: 2.3 dB (max.) at 40 GHz • High isolation: 25 dB (min.) at 40 GHz • Medium input power: P-1dB: +14 dBm Applications • Communications • Radar • ECM • EW • Fiber optics • Pulse modulation • Port isolation • Transfer switching • High speed switching • Replacement of mechanical switches

AMMC-2008 DC Specifications[1] Symbol Parameters and Test Conditions Note: 1. Backside temperature Tb = 25°C unless otherwise noted. Parameters and Test Conditions IL Insertion Loss, RFin to RFout (ON throw) ISO Isolation, RFin to RFout (OFF throw) RLin Input Return Loss RLout-on Output Return Loss (ON throw) RLout-off Output Return Loss (OFF throw) Input Power at 1 dB Gain Compression Input 3rd Order Intercept Point, dBm RFin1=RFin2 = +5 dBm, ∆f = 2 MHz Control Switching Speed[3] 10% – 90% rise time 90% – 10% fall time Notes: 1. Data measured in wafer form, Tchuck= 25°C. 2. 100% on-wafer...

AMMC-2008 Typical Performance (T = 25°C, VseM = -3V, Vse,2 = OV) Figure 1. Insertion Loss. Figure 8. Intermodulation Products vs. Pin at

AMMC-2008 Typical Scattering Parameters[1] (Tchuck = 25°C, Vsel1 = -3 V, Vsel2 = 0 V) RF Out1: OFF (terminated in 50-ohms), RF Out2: ON Freq. GHz dB Note: 1. Data obtained from on-wafer measurements.

AMMC-2008 Typical Scattering Parameters[1] (Tchuck = 25°C, Vsel1 = 0V, Vsel2 = -3V) RF Out1: ON, RF Out2: OFF (terminated in 50-ohms) Freq. GHz dB Note: 1. Data obtained from on-wafer measurements.

Recommended Operation Conditions Vsel1 Figure 10. Biasing Diagram. Operation The RF Input and Output ports may be DC or AC-coupled. If DC‑coupled, the voltages on the Input and Output ports must be 0 ± 0.25 volts for guaranteed switch performance. Assembly Techniques Mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 dB for a duration of 76 ± 8 mS. A guided wedge at an ultrasonic power level of 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature is 150 ± 2°C. The chip should...

Figure 11. Chip Bias/RF Bond Pad Locations. (dimensions in micrometers) Figure 12. Chip Assembly Diagram. Ordering Information AMMC-2008-W10 = 10 devices per tray AMMC-2008-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-3928EN AV02-1260EN - June 23, 2008