ATA2526 Low-voltage IR Receiver ASSP DATASHEET Features ● No external components except PIN diode ● Supply-voltage range: 2.7V to 5.5V ● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong signal adaption (ATC) ● Automatic supply voltage adaptation ● High immunity against disturbances from daylight and lamps ● Small size and innovative pad layout ● Available for carrier frequencies between 33kHz to 40kHz and 56kHz; adjusted by zener diode fusing ±2.5% ● TTL and CMOS compatible Applications ● Home entertainment applications ● Home appliances ● Remote control equipment

Description The Atmel® IC ATA2526 is a complete IR receiver for data communication that has been developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of noise as caused by daylight and lamps. An innovative and patented pad layout offers unique flexibility for IR receiver module assembly. The Atmel ATA2526 is available with standard frequencies (33, 36, 37, 38, 40, 56kHz) and 3 different noise suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume...

2. Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Operating temperature Tamb -25 to +85 °C Storage temperature Tstg -40 to+125 °C Power dissipation at Tamb = 25°C Ptot 30 mW 3. Electrical Characteristics, 3-V Operation Tamb = -25°C...

Electrical Characteristics, 3-V Operation (Continued) Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified. No. Test signal: see Figure 5-9 on page 9 VS = 3V, Tamb = 25°C Maximum detection threshold IIN_DC = 1µA current with square pp VIN > 0V burst N = 16 f = f0; tPER = 10ms see Figure 5-8 on page 8 BER = 5%(1) Test Conditions Controlled Amplifier and Filter Maximum value of variable gain (CGA) Minimum value of variable gain (CGA) Center frequency fusing accuracy of bandpass Overall accuracy center frequency of bandpass Overall accuracy center frequency of bandpass *) Type means:...

Electrical Characteristics, 5-V Operation (Continued) Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified. No. 7 Test Conditions Input DC current see Figure 5-4 on page 7 Minimum detection threshold current see Figure 5-2 on page 6 Test signal: see Figure 5-9 on page 9 VS = 5V Tamb = 25°C IIN_DC = 1µA Minimum detection square pp threshold current with AC burst N = 16 current disturbance f = f0; tPER = 10ms IIN_AC100 = 3µA at 100Hz see Figure 5-8 on page 8 BER = 50(1) Maximum detection threshold current with VIN > 0V Test signal: see Figure 5-9 on page 9 VS = 5V, Tamb = 25°C IIN_DC...

Typical Electrical Curves at Tamb = 25°C Figure 5-1. IEemin versus IIN_DC, VS = 3V 100 VS = 3V Figure 5-2. IEemin versus IIN_DC, VS = 5V 100 VS = 5V Figure 5-3. VIN versus IIN_DC, VS = 3V 3.5 VS = 3V

Figure 5-4. VIN versus IIN_DC, VS = 5V 3.5 VS = 5V Figure 5-5. Data Transmission Rate, VS = 3V 4000 3500 3060 Short burst type Standard type Lamp type Figure 5-6. Data Transmission Rate, VS = 5V 4000 3415 3500 Short burst type Lamp type

Figure 5-7. Typical Bandpass Curve 1.1 VS = 3V Relative Amplitude Q = f/f0/B; B → –3dB values Example: Q = 1/(1.047 – 0.954) = 11 Figure 5-8. Illustration of Used Terms, Example: f = 33kHz, burst with 16 pulses, 16 periods Period (P = 16) tPER = 970µs Burst (N = 16 pulses) tGAP > tDON + tDOFF OUT Telegram Pause Data Word Data Word

Figure 5-9. Test Circuit IEe = ΔU1/400kΩ ΔU1 Figure 5-10. Application Circuit VDD = 3V to 5V

Chip Dimensions Figure 6-1. Chip Size in µm 1080,960 GND 393,839 width Note: Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0 Length inclusive scribe Width inclusive scribe Fusing pads Value depends on manufacture location.

Delivery: unsawn wafers (DDW) in box

Revision History Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. • Put datasheet in the latest template • Thermal Resistance table deleted • Pin columns in Electrical Characteristics tables deleted • Put datasheet in newest template • Section 8 “Ordering Information” on page 12 changed • Features on page 1 changed • Applications on page 1 changed • Section 1 “Description” on page 1 changed • Section 2 “Pin Configuration” on page 2 changed • Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics,...

XXXXXX Atmel Corporation 1600 Technology Drive, San Jose, CA 95110 USA © 2014 Atmel Corporation. / Rev.: Rev.: 4905G–AUTO–04/14 Atmel®, Atmel logo and combinations thereof, Enabling Unlimited Possibilities®, and others are registered trademarks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. DISCLAIMER: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the...