Thyristor - Diode Modules MFC90 MFA90 MFK90 MFX90 Features：  Isolated mounting base 2500V~ Pressure contact technology with Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers IT(AV) VDRM/VRRM ITSM I2t VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled,Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

MTC90 Peak On-state Voltage Vs.Peak On-state Current 0.28 Impedance Vs.Time Max. junction To case Thermai 0.3 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts Instantaneous on-state currant,amperes Max. case TemperatureMTC90 Vs.Mean On-state Current Max. Power Dissipation MTC90 Vs.Mean On-state Current 140 120 Conduction Angle Case temperature,°C Conduction Angle Fig.4 Max. case Temperature Vs.Mean On-state Current MTC90 Max. Power DissipationMTC90 Vs.Mean On-state Current 140 Conduction Angle Case temperature,°C Conduction Angle

Surge Current 2.25 Vs.Cycles 30 Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,100MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)