Thyristor - Diode Modules MFC570 MFA570 MFK570 MFX570 Features：  Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled,Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

MTC570/1800V Peak On-state Voltage Vs.Peak On-state Current Max. junction To case 0.065 Thermai Impedance Vs.Time 0.07 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts Case temperature°C Conduction Angle Conduction Angle Case temperature,°C Max. case Temperature Vs.Mean On-state Current MTc570/1800 MTC570/1800V Max. Power Dissipation Vs.Mean On-state Current Conduction Angle Max. case Temperature Vs.Mean On-state Current MT570/1800v MTC570/1800V Max. Power Dissipation Vs.Mean On-state Current Conduction Angle

Surge Current 15 Vs.Cycles Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 3 V,200MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)