Thyristor - Diode Modules MFC55 MFA55 MFK55 MFX55 Features：  Isolated mounting base 3000V~ Pressure contact technology with Increased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers IT(AV) VDRM/VRRM ITSM I2t VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled, Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heat sink Isolation voltage Single side cooled Single side cooled Thermal connection torque (M5) Stored temperature

Max . junction To case Thermai Impedance Vs.Time 0.49 MTC55/2500V Peak On-state Voltage Vs.Peak On-state Current 0.5 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 100 Instantaneous on-state currant,amperes Max . case Temperature Vs.Mean MTC55 高压 On-state Current MTC55高压 Max . Pow er Dissipation Vs.Mean On-state Current Conduction Angle Case temperature,°C Mean on-state current,amperes Fig.4 Max . case Temperature Vs.Mean On-state Current MTC55高压 MTC55高压 Max . Pow er Dissipation Vs.Mean On-state Current 140 Conduction Angle Conduction Angle Conduction Angle

Surge Current 1.5 Vs.Cycles Total peak half-sine surge current,kA Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature 2.5V,100MA MFK(DT) MFX(DT)