Thyristor - Diode Modules MFC400 MFA400 MFK400 MFX400

Product catalog summary

Specifications:
- Mean on-state current (IT(AV)): 400 A at 180° half sine wave, 50Hz, single side cooled, Tc=85°C.
- RMS on-state current (IT(RMS)): 628 A.
- Repetitive peak off-state and reverse voltage (VDRM, VRRM): 600 to 1800 V.
- Repetitive peak current (IDRM, IRRM): 35 mA at VDRM and VRRM.
- Surge on-state current (ITSM): 12.5 kA.
- I2t for fusing coordination: 781 A²s x 10³.
- Threshold voltage (VTO): 0.80 V.
- On-state slope resistance (rT): 0.49 mΩ.
- Peak on-state voltage (VTM): 1.52 V at ITM=1200A.
- Critical rate of rise of off-state voltage (dv/dt): 800 V/μs.
- Critical rate of rise of on-state current (di/dt): 100 A/μs.
- Gate trigger current (IGT): 30 to 200 mA.
- Gate trigger voltage (VGT): 1.0 to 3.0 V.
- Holding current (IH): 20 to 200 mA.
- Non-trigger gate voltage (VGD): 0.2 V.
- Thermal resistance junction to case (Rth(j-c)): 0.080 °C/W.
- Thermal resistance case to heatsink (Rth(c-h)): 0.024 °C/W.
- Isolation voltage: 2500 V.
- Thermal connection torque (M10): 12.0 N·m.
- Mounting torque (M6): 6.0 N·m.
- Storage temperature (Tstg): -40 to 125 °C.
- Weight: 2040 g.

Features:
- Isolated mounting base with 2500V isolation.
- Pressure contact technology for increased power cycling capability.
- Space and weight savings.

Typical Applications:
- AC/DC Motor drives.
- Various rectifiers.
- DC supply for PWM inverter.

Graphical Data Summary:
- Graphs illustrate the relationship between mean on-state current and maximum power dissipation, case temperature, and peak on-state voltage.
- Surge current vs. cycles and I2t vs. time are also depicted, showing performance under different conditions.

Catalog excerpts

Thyristor - Diode Modules MFC400 MFA400 MFK400 MFX400-1

Thyristor - Diode Modules MFC400 MFA400 MFK400 MFX400 Features：  Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled,Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

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Thyristor - Diode Modules MFC400 MFA400 MFK400 MFX400-2

Peak On-state VoltageMTC400 Vs.Peak On-state Current Max. junction To case Thermai 0.08 Impedance Vs.Time 0.09 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 1000 10000 Instantaneous on-state currant,amperes Fig.1 MTC400 Max. Power Dissipation Vs.Mean On-state Current Max. case Temperature Vs.Mean On-state Current MTC400 140 180 Conduction Angle Conduction Angle 200 400 600 Mean on-state current,amperes Max. Power Dissipation MTC350 mtc400 Vs.Mean On-state Current Max. case Temperature Vs.Mean On-state Current MTC400 Conduction Angle Case temperature,°C Conduction Angle...

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Thyristor - Diode Modules MFC400 MFA400 MFK400 MFX400-3

Surge Current 12.5 Vs.Cycles Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 3 V,200MA 4.5 Gate characteristic at 25°C junction temperature 18

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