Thyristor - Diode Modules MFC300 MFA300 MFK300 MFX300 Features：  Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled,Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

Peak On-state VoltageMTC300 Vs.Peak On-state Current 0.10 Impedance Vs.Time Max. junction To case Thermai 0.12 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 1000 10000 Instantaneous on-state currant,amperes Fig.1 Max. Power Dissipation MTC300 Vs.Mean On-state Current Max. case TemperatureMTC300 Vs.Mean On-state Current 140 180 Conduction Angle Conduction Angle Fig.4 Max. case Temperature Vs.Mean On-state Current MTC300 MTC300 Max. Power Dissipation Vs.Mean On-state Current 140 Conduction Angle Conduction Angle Mean on-state current,amperes

Surge Current 9.3 Vs.Cycles 500 Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,180MA 4 Gate voltage,VGT，V Gate voltage,VGT，V Gate characteristic at 25°C junction temperature 18 Gate current,IGT，A Outline: MFA(TD) MFK(DT) MFX(DT)