Thyristor - Diode Modules MFC250 MFA250 MFK250 MFX250 Features：  Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled,Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

0.12 Impedance Vs.Time Max. junction To case Thermai 0.14 Peak On-state VoltageMTC250 Vs.Peak On-state Current Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 1000 10000 Instantaneous on-state currant,amperes Fig.1 Max. Power Dissipation MTC250 Vs.Mean On-state Current Max. case Temperature MTC250 Vs.Mean On-state Current 140 180 Conduction Angle Case temperature,°C Conduction Angle Mean on-state current,amperes Max. case TemperatureMTC250 Vs.Mean On-state Current 140 Case temperature,°C MTC250 Max. Power Dissipation Vs.Mean On-state Current Mean on-state current,amperes...

Total peak half-sine surge current,kA Surge Current 9 Vs.Cycles Fig.8 Gate Trigger Zone at varies temperature 2.5V,180MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)