Catalog excerpts
Thyristor - Diode Modules MFC200 MFA200 MFK200 MFX200 Features： Isolated mounting base 3000V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Increased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled, Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heat sink Isolation voltage Single side cooled Single side cooled Thermal connection torque (M5) Stored temperature
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Max . junction To case0.14 Thermai Impedance Vs.Time MTC200高压 Peak On-state Voltage Vs.Peak On-state Current 3.4 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 10 100 1000 Instantaneous on-state currant,amperes MTC200 Max . case Temperature Vs.Mean 高压 On-state Current Max . Pow er Dissipation Vs.Mean On-state Current MTC200高压 180 Conduction Angle Case temperature,°C Conduction Angle Max . case Temperature Vs.Mean MTC200 @ On-state Current MTC200高压 Max . Pow er Dissipation Vs.Mean On-state Current 140 Case temperature,°C Conduction Angle Mean on-state current,amperes
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Surge Current 8 Vs.Cycles Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,180MA Gate characteristic at 25°C junction temperature
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